Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer.
Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer.
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超薄INP钝化层的长期稳定性和光电性能增强INASP纳米线。
DOI：
10.1021/acs.nanolett.2c00805
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发表时间：
2022-04-27
期刊：
影响因子：
10.8
通讯作者：
Zhang, Yunyan
中科院分区：
文献类型：
--
作者：
Chen, LuLu;OAdeyemo, Stephanie;Fonseka, H. Aruni;Liu, Huiyun;Kar, Srabani;Yang, Hui;Velichko, Anton;Mowbray, David J.;Cheng, Zhiyuan;Sanchez, Ana M.;Joyce, Hannah J.;Zhang, Yunyan
纳米线表面态的影响随着直径的减小而迅速增加，从而严重降低了窄直径纳米线的光电性能。因此，表面钝化至关重要，但在不显著影响其他质量的情况下实现长期有效的钝化具有挑战性。在这里，我们证明了2-3 nm的InP钝化层可以有效地解决这些挑战。对于直径为30-40 nm的InAsP纳米线，钝化层使表面复合速度降低至少70%，并使电荷载流子寿命增加3倍。即使在环境大气中储存样品超过3年后，这些改进仍得以保持。这种钝化还大大提高了这些薄纳米线的性能热耐受性，并将其工作温度从<150 K扩展到室温。这项研究提供了一个新的路线，以高性能的室温窄直径NW设备的长期稳定性。
The influence of nanowire (NW) surface states increases rapidly with the reduction of diameter and hence severely degrades the optoelectronic performance of narrow-diameter NWs. Surface passivation is therefore critical, but it is challenging to achieve long-term effective passivation without significantly affecting other qualities. Here, we demonstrate that an ultrathin InP passivation layer of 2–3 nm can effectively solve these challenges. For InAsP nanowires with small diameters of 30–40 nm, the ultrathin passivation layer reduces the surface recombination velocity by at least 70% and increases the charge carrier lifetime by a factor of 3. These improvements are maintained even after storing the samples in ambient atmosphere for over 3 years. This passivation also greatly improves the performance thermal tolerance of these thin NWs and extends their operating temperature from <150 K to room temperature. This study provides a new route toward high-performance room-temperature narrow-diameter NW devices with long-term stability.
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