Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components.
Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components.
复制标题
不同Sb组分GaAs/GaAsSb/GaAs同轴单量子阱纳米线的光学特性
作者：
III-V族三元合金量子阱是近年来研究的热点。特别是GaAs/GaAsSb量子威尔斯阱由于其在近红外光电器件领域的众多应用而受到越来越多的关注。随着尺寸的进一步减小，GaAs/GaAsSb纳米线显示出许多不同于量子阱结构的特殊性质。在这项工作中，GaAs/GaAs 1 −xSbx/GaAs同轴单量子阱纳米线具有不同的Sb成分生长的分子束外延。通过光致发光谱测量和温度测量研究了样品的能带结构和光学性质。结果表明，随着Sb组分的增加，量子阱的深度增加。由于更深的量子阱，实现了更有效的电子约束，样品的发射在室温下仍然可以被检测到。不同温度下峰位和峰形的不同趋势也支持样品的温度稳定性改善。这些结果将有助于合金量子威尔斯的设计和合金量子阱器件的开发。具有较大Sb含量的GaAs/GaAs 1 −xSbx/GaAs同轴单量子阱纳米线导致更好的电子约束，这大大提高了它们的热稳定性。
III–V ternary alloy quantum-wells have become a hot topic in recent years. Especially, GaAs/GaAsSb quantum wells have attracted increasing attention due to their numerous applications in the field of near-infrared optoelectronic devices. With the further reduction of dimensions, GaAs/GaAsSb nanowires show many special properties compared to their quantum well structures. In this work, GaAs/GaAs1−xSbx/GaAs coaxial single quantum-well nanowires with different Sb composition were grown by molecular beam epitaxy. The band structure and the optical properties were investigated through power-dependent and temperature-dependent photoluminescence measurement. It has been found that a deeper quantum well is created with the increase of Sb component. Thanks to the deeper quantum well, more effective electron confinement has been realized, the emission from the sample can still be detected up to room temperature. The different trend of peak position and shape at various temperatures also supports the improved temperature stability of the samples. These results will be beneficial for the design of alloy quantum wells, and will facilitate the development of alloy quantum-well based devices. GaAs/GaAs1−xSbx/GaAs coaxial single quantum-well nanowires with larger Sb content result in better electron confinement, which greatly improves their thermal stability.
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