Mg-related charge transitions in Mg-doped Ga2O3
Mg-related charge transitions in Mg-doped Ga2O3
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掺镁 Ga2O3 中与镁相关的电荷跃迁
DOI：
10.1117/12.2582040
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Zvanut, Mary E.
中科院分区：
文献类型：
--
作者：
Bhandari, Suman;Zvanut, Mary E.
氧化镓 (Ga2O3) 是一种在功率器件中具有潜在应用前景的超宽带隙半导体，可以通过掺杂 Mg 来控制本征 n 型电导率。使用光致电子顺磁共振 (photo-EPR) 光谱研究了镁掺杂 β-Ga2O3 晶体中与镁相关的电荷跃迁，以了解产生稳定的半绝缘基板的机制。通过用 0.7 至 4.7 eV 的光子能量照射样品，在 130 K 下进行稳态光电 EPR 测量。我们的结果表明，带隙中存在与 Mg 相关的两个跃迁：中性 Mg 在 1.5 eV 处开始猝灭，并在 3.0 eV 处激发。猝灭阈值与 Mg-/0 水平的几个 DFT 预测值一致。因此，我们认为猝灭是由于电子从价带跃迁到中性镁所致。对于光激发，由于 Ga2O3 中中性 Mg 的极化性质，空穴捕获是唯一可行的过程。测量结果表明，电子对铁和铱等杂质的激发不会导致空穴的产生。此外，镓空位不得参与，因为从未见过其特征 EPR 光谱。因此，我们推测导致空穴形成和随后激发中性镁的缺陷是氧空位。
Gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor with potential applications in power devices, may be doped with Mg to control the native n-type conductivity. The charge transitions associated with Mg in Mg-doped β-Ga2O3crystals are studied using photoinduced electron paramagnetic resonance (photo-EPR) spectroscopy to understand the mechanisms that produce stable semi-insulating substrates. The steady state photo-EPR measurements are performed at 130 K by illuminating the samples with photon energy from 0.7 to 4.7 eV. Our results show that there are two transitions associated with Mg in the bandgap: onset of quenching of neutral Mg at 1.5 eV and excitation at 3.0 eV. The quenching threshold is consistent with several DFT predicted values for Mg-/0level. Therefore, we suggest the quenching is due to transition of an electron from the valence band to the neutral Mg. For photoexcitation, hole capture is the only viable process due to polaronic nature of neutral Mg in Ga2O3. The measurements demonstrate that electron excitation to impurities, such as Fe and Ir, does not contribute to creation of the holes. Further, gallium vacancies must not participate since their characteristic EPR spectrum is never seen. Thus, we speculate that the defects responsible for the hole formation and consequent excitation of the neutral Mg are oxygen vacancies.
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DOI：
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发表时间：
2020
期刊：
影响因子：
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作者：
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影响因子：
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作者：
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作者：
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通讯作者：
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DOI：
--
发表时间：
1985
期刊：
影响因子：
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作者：
M. Godlewski
通讯作者：
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