Controllable size reduction of CdSe nanowires through the intermediate formation of Se-coated CdSe nanowires using acid and thermal treatment
Controllable size reduction of CdSe nanowires through the intermediate formation of Se-coated CdSe nanowires using acid and thermal treatment
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通过酸和热处理中间形成 Se 包覆的 CdSe 纳米线，可控地减小 CdSe 纳米线的尺寸
DOI：
10.1088/0957-4484/18/41/415607
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发表时间：
2007-10
期刊：
影响因子：
3.5
通讯作者：
Li, Q.
中科院分区：
文献类型：
--
作者：
Lam, N. S.;Lau, W. M.;Zheng, Z.;Wong, K. W.;Li, Q.
Thinning of CdSe nanowires (NWs) with controllable size was achieved by a simple acid treatment and subsequent annealing on thick CdSe NWs synthesized from vapour phase growth. During acid treatment, not only the undesired impurities such as native oxides of Cd and Se could be etched, but surface reactions of CdSe NWs were also observed, resulting in the formation of a layer of elemental Se around a thinner CdSe core. As a result, a heterostructure of Se@CdSe nanostructure formed after acid treatment of CdSe NWs. Upon thermal annealing, the Se shell was effectively removed and thinned stoichiometric single-crystalline CdSe NWs could be obtained. It was observed that NWs could be thinned by up to ∼60% in diameter by acid treatment and subsequent Se thermal desorption. The degree of thinning was controllable by adjusting the duration of acid treatment. The success of the thinning of CdSe NWs by simple acid treatment and the annealing process reported here opens a new processing route for obtaining stoichiometric CdSe NWs with controllable size reduction and improved aspect ratio. This can undoubtedly broadly improve the range of applications of 1D CdSe nanostructures and allow more exploration of their uni-directional properties. A correction was made to the last paragraph of section 3 on 18 September 2007. The corrected electronic version is identical to the print version.
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影响因子：
3.2
作者：
Tai-bor Wu;J. -. Chen;C. Chiang;Y. Pang;Shu Yang
通讯作者：
Tai-bor Wu;J. -. Chen;C. Chiang;Y. Pang;Shu Yang
影响因子：
19
作者：
Z. Y. Wang-Z. Y.-Wang-2124804645;Q. Lu;X. Fang;X. Tian;L. D. Zhang-L. D.-Zhang-2160084959
通讯作者：
Z. Y. Wang-Z. Y.-Wang-2124804645;Q. Lu;X. Fang;X. Tian;L. D. Zhang-L. D.-Zhang-2160084959
影响因子：
2.8
作者：
Unyong Jeong;Younan Xia;Yadong Yin
通讯作者：
Unyong Jeong;Younan Xia;Yadong Yin
影响因子：
2.8
作者：
Xinsheng Peng;Junpei Zhang;Xingtao Wang;Youfeng Wang;Lizeng Zhao;G. Meng;Ligong Zhang
通讯作者：
Xinsheng Peng;Junpei Zhang;Xingtao Wang;Youfeng Wang;Lizeng Zhao;G. Meng;Ligong Zhang
DOI：
10.1116/1.570593
发表时间：
1980-09
期刊：
Journal of Vacuum Science and Technology
影响因子：
--
作者：
A. Ebina;K. Asano;Y. Suda;T. Takahaski
通讯作者：
A. Ebina;K. Asano;Y. Suda;T. Takahaski