Enhanced Ultra-violet Photodetection Based on a Heterojunction Consisted of ZnO Nanowires and Single-Layer Graphene on Silicon Substrate
Enhanced Ultra-violet Photodetection Based on a Heterojunction Consisted of ZnO Nanowires and Single-Layer Graphene on Silicon Substrate
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基于硅衬底上 ZnO 纳米线和单层石墨烯异质结的增强型紫外光电探测
DOI：
10.1007/s13391-019-00186-z
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发表时间：
2019-11
影响因子：
2.4
通讯作者：
Zhenwei Xia
中科院分区：
文献类型：
--
作者：
Yu Liu;Zengcai Song;Sheng Yuan;Lei Xu;Yan-hui Xin;Duan Meixia;Shu-xia Yao;Yang Yangrui;Zhenwei Xia
在本研究中，我们在p型矽基板上制作了以氧化锌奈米线为基础的异质接面光电元件，并以单层石墨烯为插入层。分别采用水热法和化学气相沉积法制备了ZnO纳米线和石墨烯。扫描电镜和X射线衍射分析表明，插入层对ZnO纳米线形貌的影响很小。拉曼散射表明，所制备的石墨烯为单层结构。具有单一石墨烯插入层的光电探测器的紫外探测性能远优于没有单一石墨烯插入层的光电探测器。单石墨烯插入层的光电探测器的紫外辐照灵敏度达到1071，比未插入单石墨烯插入层的光电探测器提高了7倍。此外，具有单个石墨烯插入层的光电探测器具有更快的响应时间（1.02s）和恢复时间（0.34s）。
In this study, heterojunction photoelectric devices based ZnO nanowires were fabricated on p-Si substrate with and without single-layer graphene as insert layer. ZnO nanowires and graphene were prepared by hydrothermal method and chemical vapor deposition respectively. The effect of insert layer on the morphology of ZnO nanowires was very weak as can be seen from scanning electron microscope and X-ray diffraction. Raman scattering showed that the graphene prepared was a single-layer structure. The ultraviolet detection performance of photodetectors with single graphene insert layer was much better than that of photodetectors without single graphene insert layer. The ultraviolet irradiation sensitivity of photodetectors with single graphene insert layer was up to 1071 which was improved 7 times than that of photodetectors without single graphene insert layer. Moreover, photodetectors with single graphene insert layer had faster response time (1.02s) and recovery time (0.34s).
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