High-Performance Ultraviolet Photodetector Based on Graphene Quantum Dots Decorated ZnO Nanorods/GaN Film Isotype Heterojunctions.
High-Performance Ultraviolet Photodetector Based on Graphene Quantum Dots Decorated ZnO Nanorods/GaN Film Isotype Heterojunctions.
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基于石墨烯量子点修饰ZnO纳米棒/GaN薄膜同型异质结的高性能紫外光电探测器
DOI：
10.1186/s11671-018-2672-5
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发表时间：
2018-08-30
影响因子：
--
通讯作者：
Yang J
中科院分区：
文献类型：
--
作者：
Liu D;Li HJ;Gao J;Zhao S;Zhu Y;Wang P;Wang D;Chen A;Wang X;Yang J
采用在n-GaN薄膜上生长n-ZnO纳米棒阵列，然后旋涂石墨烯量子点的方法，制备了一种新型的异质结紫外光电探测器。暴露于波长为365 nm的UV照射下，混合检测器的时间依赖性光响应表现出高灵敏度和一致的瞬态，上升时间为100 ms，衰减时间为120 ms。同时，在10 V偏压下获得了超高的比探测率（高达~ 1012 Jones）和高的光响应率（高达34 mA W-1）。与裸异质结探测器相比，GQDs修饰的n-ZnO/n-GaN异质结探测器的优异性能归因于GQDs在ZnO纳米棒阵列上的有效固定。GQD作为光吸收剂和电子供体被开发，以有效地提高界面结中的有效载流子浓度。此外，在GQD修饰的ZnO/GaN混合物中，适当的能带排列也可以是促进紫外光诱导的光电流和响应速度的潜在因素。
A novel isotype heterojunction ultraviolet photodetector was fabricated by growing n-ZnO nanorod arrays on n-GaN thin films and then spin-coated with graphene quantum dots (GQDs). Exposed to UV illumination with a wavelength of 365 nm, the time-dependent photoresponse of the hybrid detectors manifests high sensitivity and consistent transients with a rise time of 100 ms and a decay time of 120 ms. Meanwhile, an ultra-high specific detectivity (up to ~ 1012 Jones) and high photoresponsivity (up to 34 mA W−1) are obtained at 10 V bias. Compared to the bare heterojunction detectors, the excellent performance of the GQDs decorated n-ZnO/n-GaN heterostructure is attributed to the efficient immobilization of GQDs on the ZnO nanorod arrays. GQDs were exploited as a light absorber and act like an electron donor to effectively improve the effective carrier concentration in interfacial junction. Moreover, appropriate energy band alignment in GQDs decorated ZnO/GaN hybrids can also be a potential factor in facilitating the UV-induced photocurrent and response speed.
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影响因子：
4
作者：
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通讯作者：
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影响因子：
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影响因子：
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作者：
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通讯作者：
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