Electrochemical deposition of nanosemiconductor CuSe on multiwalled carbon nanotubes/polyimide membrane and photoelectric property researches
Electrochemical deposition of nanosemiconductor CuSe on multiwalled carbon nanotubes/polyimide membrane and photoelectric property researches
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多壁碳纳米管/聚酰亚胺膜上纳米半导体CuSe的电化学沉积及光电性能研究
DOI：
10.1007/s10008-012-1748-x
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发表时间：
2012-04
影响因子：
2.5
通讯作者：
Wang, Chunming
中科院分区：
文献类型：
--
作者：
Li, Jiajia;Kou, Huanhuan;Jiang, Yimin;Lu, Daban;Zheng, Zhixiang;Wang, Chunming
采用电化学原子层沉积法（EC-ALD）在自制的多壁碳纳米管/聚酰亚胺（COOH-MWCNTs/PI）膜电极上制备了纳米半导体CuSe。通过循环伏安法和微分脉冲溶出伏安法对元素、电化学性质进行探讨，最终确定-0.2 V和-0.55 V分别为铜和硒的沉积电位。电流密度-时间曲线通过安培I-t过程获得，表明铜层的形成是通过二维成核和生长机制，而硒的生长被认为是扩散控制过程。X射线粉末衍射数据显示CuSe晶体的择优取向为（112）面。场发射扫描电子显微镜和能量色散X射线能谱分析表明，所制备的CuSe薄膜为短的虚栅纳米结构，Cu：Se的平均原子百分比接近1。此外，紫外可见光（UV-Vis）透射测量提供了2.0 eV的带隙。开路电位（OCP）和电流测试表明CuSe薄膜为p型半导体。结果表明，在COOH-CNTs/PI膜上沉积的CuSe薄膜适合作为太阳能传输材料。
Nanosemiconductor CuSe were prepared on self-made multiwalled carbon nanotubes/polyimide (COOH-MWCNTs/PI) membrane electrode by electrochemical atomic layer deposition (EC-ALD). By exploring the elements, electrochemical properties through cyclic voltammetry and differential pulse-stripping voltammetry, -0.2 and -0.55 V are finally identified as the deposition potential of copper and selenium, respectively. Current density − time curve obtained via amperometricI–tprocesses indicates the formation of copper layer by a two-dimensional nucleation and growth mechanism, while selenium growth is considered to be diffusion control process. X-ray powder diffraction data reveals the preferred orientation of the CuSe crystal is at (112) plane. Field emission scanning electron microscopy and energy-dispersive X-ray spectroscopy analysis show that the obtained CuSe thin film are short virgate nanostructure, and the average atomic percentage of Cu:Se is close to one. Furthermore, the ultraviolet visible (UV–Vis) transmission measurements provide a band gap of 2.0 eV. Open-circuit potential (OCP) and amperometricI–texperiments illustrate the CuSe thin film to be p-type semiconductor. Obtained results indicate that the CuSe thin film depositing on COOH-CNTs/PI membrane is appropriate to serve as the solar energy transfer material.
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影响因子：
6.6
作者：
Huanhuan Kou;Xin Zhang;Yimin Jiang;Jiajia Li;Shengjiao Yu;Zhixiang Zheng;Chunming Wang
通讯作者：
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作者：
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通讯作者：
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影响因子：
6.1
作者：
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通讯作者：
A. Tonejc;Z. Ogorelec;B. Mestnik
影响因子：
1.8
作者：
M. Mathe;S. Cox;B. H. Flowers;R. Vaidyanathan;L. Pham;Nattapong Srisook;U. Happek;J. Stickney
通讯作者：
M. Mathe;S. Cox;B. H. Flowers;R. Vaidyanathan;L. Pham;Nattapong Srisook;U. Happek;J. Stickney