Electrochemical atomic layer deposition of a CuInSe2 thin film on flexible multi-walled carbon nanotubes/polyimide nanocomposite membrane: Structural and photoelectrical characterizations
Electrochemical atomic layer deposition of a CuInSe2 thin film on flexible multi-walled carbon nanotubes/polyimide nanocomposite membrane: Structural and photoelectrical characterizations
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柔性多壁碳纳米管/聚酰亚胺纳米复合膜上 CuInSe2 薄膜的电化学原子层沉积:结构和光电表征
DOI:
10.1016/j.electacta.2011.03.128
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发表时间:
2011-06
影响因子:
6.6
通讯作者:
Chunming Wang
中科院分区:
文献类型:
--
作者:
Huanhuan Kou;Xin Zhang;Yimin Jiang;Jiajia Li;Shengjiao Yu;Zhixiang Zheng;Chunming Wang
This study describes a method for the fabrication of an electrochemical atomic layer deposition (EC-ALD) used to fabricate the ternary, semiconducting compound, CuInSe2(CISe), onto a flexible, carboxyl-functionalized multi-walled carbon nanotube/polyimide (COOH-MWCNT/PI) nanocomposite membrane. The elements were deposited using amperometric methods (I–t) in the following sequence: Se/Cu/Se/In/Se/Cu/Se/In and so on, in which the optimum deposition potential for each element was obtained via a cyclic voltammetry (CV) technique. Field emission scanning electron microscopy (FE-SEM) showed that the deposits consisted of many spherical nanoparticles, and energy dispersive spectroscopy (EDS) analysis indicated that the atomic ratio of the deposits (CuInSe) was 1.14 1.00 2.18, similar to the stoichiometric value of the compound. Near Fourier transform infrared spectroscopy (FT-IR) transmission measurements provided a band gap of 1.05 eV, which was confirmed by the absorption spectrum. Open-circuit potential (OCP) and current-voltage (I–V) measurements showed the resulting composite had a good p-type property. CISe spherical NPs electrodeposited on the CNTs/PI membrane may have promising applications in optoelectronic nanodevices and nanotechnologies; in addition, the CNTs/PI membrane could be used as raw material for manufacturing solar cells.
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影响因子:
3.2
作者:
J. Herrero;C. Guillén
通讯作者:
J. Herrero;C. Guillén
影响因子:
1.8
作者:
M. Mathe;S. Cox;B. H. Flowers;R. Vaidyanathan;L. Pham;Nattapong Srisook;U. Happek;J. Stickney
通讯作者:
M. Mathe;S. Cox;B. H. Flowers;R. Vaidyanathan;L. Pham;Nattapong Srisook;U. Happek;J. Stickney
影响因子:
4
作者:
Endo, M;Takeuchi, K;Dresselhaus, MS
通讯作者:
Dresselhaus, MS
影响因子:
8.6
作者:
Choi, Jaewon;Kang, Narae;Son, Seung Uk
通讯作者:
Son, Seung Uk
影响因子:
3.2
作者:
F. White;A. Clark;M. Graf;L. Kazmerski
通讯作者:
F. White;A. Clark;M. Graf;L. Kazmerski