Electrochemical atomic layer deposition of a CuInSe2 thin film on flexible multi-walled carbon nanotubes/polyimide nanocomposite membrane: Structural and photoelectrical characterizations

Electrochemical atomic layer deposition of a CuInSe2 thin film on flexible multi-walled carbon nanotubes/polyimide nanocomposite membrane: Structural and photoelectrical characterizations
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柔性多壁碳纳米管/聚酰亚胺纳米复合膜上 CuInSe2 薄膜的电化学原子层沉积:结构和光电表征

DOI:
10.1016/j.electacta.2011.03.128
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发表时间:
2011-06
影响因子:
6.6
通讯作者:
Chunming Wang
Chunming Wang
中科院分区:
材料科学2区
文献类型:
--
作者:
Huanhuan Kou;Xin Zhang;Yimin Jiang;Jiajia Li;Shengjiao Yu;Zhixiang Zheng;Chunming Wang

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本研究描述了一种制备电化学原子层沉积(EC-ALD)的方法,用于在柔性、羧基功能化的多壁碳纳米管/聚酰亚胺(COOH-MWCNT/PI)纳米复合膜上制备三元半导体化合物CuInSe2(CESE)。用安培法(i-t)按如下顺序沉积元素:Se/Cu/Se/In/Se/Cu/Se/In等,其中每个元素的最佳沉积电位是通过循环伏安(CV)技术获得的。场发射扫描电子显微镜(FE-SEM)分析表明,沉积层由许多球形纳米颗粒组成,能谱分析表明,沉积层的原子比(CuInSe)为1.14~1.00~2.18,与化合物的化学计量比相近。近傅里叶变换红外光谱(FT-IR)的透射率测量得到了1.05 eV的带隙,吸收光谱证实了这一点。开路电位(OCP)和电流-电压(I-V)测试表明,所制备的复合材料具有良好的p型性能。电沉积在碳纳米管/聚酰亚胺薄膜上的纳米纳米粒子在光电纳米器件和纳米技术方面具有广阔的应用前景;此外,碳纳米管/聚酰亚胺薄膜还可以作为制造太阳能电池的原料。
This study describes a method for the fabrication of an electrochemical atomic layer deposition (EC-ALD) used to fabricate the ternary, semiconducting compound, CuInSe2(CISe), onto a flexible, carboxyl-functionalized multi-walled carbon nanotube/polyimide (COOH-MWCNT/PI) nanocomposite membrane. The elements were deposited using amperometric methods (I–t) in the following sequence: Se/Cu/Se/In/Se/Cu/Se/In and so on, in which the optimum deposition potential for each element was obtained via a cyclic voltammetry (CV) technique. Field emission scanning electron microscopy (FE-SEM) showed that the deposits consisted of many spherical nanoparticles, and energy dispersive spectroscopy (EDS) analysis indicated that the atomic ratio of the deposits (CuInSe) was 1.14 1.00 2.18, similar to the stoichiometric value of the compound. Near Fourier transform infrared spectroscopy (FT-IR) transmission measurements provided a band gap of 1.05 eV, which was confirmed by the absorption spectrum. Open-circuit potential (OCP) and current-voltage (I–V) measurements showed the resulting composite had a good p-type property. CISe spherical NPs electrodeposited on the CNTs/PI membrane may have promising applications in optoelectronic nanodevices and nanotechnologies; in addition, the CNTs/PI membrane could be used as raw material for manufacturing solar cells.
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