Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO(2) single crystals.
Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO(2) single crystals.
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DOI：
10.1038/s41598-017-05651-z
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发表时间：
2017-07-13
影响因子：
4.6
通讯作者：
Taniguchi H
中科院分区：
文献类型：
--
作者：
Kawarasaki M;Tanabe K;Terasaki I;Fujii Y;Taniguchi H
大介电常数介电材料的发展对电子器件的小型化和高密度储能器件的制造具有重要意义。电子钉住缺陷偶极子最近被提出将（Nb + In）共掺杂TiO2的介电常数提高到105。然而，后续的研究表明，热激发载流子对巨大介电常数的外在贡献。在此，我们证明了（Nb + in）共掺杂TiO2单晶在足够低的温度下的介电常数显著增强，使得热激发载流子被冻结，对介电响应没有影响。结果表明，其介电常数达到纯TiO2的四倍。这一发现表明，电子钉住的缺陷偶极子在TiO2基质的介电响应基础上增加了额外的介电响应。研究结果为将复杂缺陷工程化成块状材料开发具有大介电常数的功能介电材料提供了一条新途径。
The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently proposed to boost the permittivity of (Nb + In) co-doped TiO2 to 105. However, the follow-up studies suggest an extrinsic contribution to the colossal permittivity from thermally excited carriers. Herein, we demonstrate a marked enhancement in the permittivity of (Nb + In) co-doped TiO2 single crystals at sufficiently low temperatures such that the thermally excited carriers are frozen out and exert no influence on the dielectric response. The results indicate that the permittivity attains quadruple of that for pure TiO2. This finding suggests that the electron-pinned defect-dipoles add an extra dielectric response to that of the TiO2 host matrix. The results offer a novel approach for the development of functional dielectric materials with large permittivity by engineering complex defects into bulk materials.
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影响因子：
4.6
作者：
Li J;Li F;Li C;Yang G;Xu Z;Zhang S
通讯作者：
Zhang S
金红石Ti0.9In0.05Nb0.05O2大介电常数的来源：单晶和多晶
影响因子：
4.6
作者：
Song Y;Wang X;Sui Y;Liu Z;Zhang Y;Zhan H;Song B;Liu Z;Lv Z;Tao L;Tang J
通讯作者：
Tang J
影响因子：
0.8
作者：
CROSS, LE
通讯作者：
CROSS, LE
DOI：
10.1111/j.1151-2916.1989.tb06008.x
发表时间：
1989-10-01
影响因子：
3.9
作者：
CHIOU, BS;LIN, ST;CHANG, PH
通讯作者：
CHANG, PH
影响因子：
41.2
作者：
Hu, Wanbiao;Liu, Yun;Wong-Leung, Jennifer
通讯作者：
Wong-Leung, Jennifer