Revealing the growth of copper on polystyrene-block-poly(ethylene oxide) diblock copolymer thin films with in situ GISAXS.
Revealing the growth of copper on polystyrene-block-poly(ethylene oxide) diblock copolymer thin films with in situ GISAXS.
复制标题
利用原位 GISAXS 揭示铜在聚苯乙烯-嵌段-聚环氧乙烷二嵌段共聚物薄膜上的生长
DOI:
10.1039/d1nr01480c
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发表时间:
2021
期刊:
影响因子:
6.7
通讯作者:
P. Müller-Buschbaum
中科院分区:
文献类型:
--
作者:
S. J. Schaper;F. C. Löhrer;S. Xia;C. Geiger;M. Schwartzkopf;P. Pandit;J. Rubeck;B. Fricke;S. Frenzke;A. M. Hinz;N. Carstens;O. Polonskyi;T. Strunskus;F. Faupel;S. V. Roth;P. Müller-Buschbaum
Copper (Cu) as an excellent electrical conductor and the amphiphilic diblock copolymer polystyrene-block-poly(ethylene oxide) (PS-b-PEO) as a polymer electrolyte and ionic conductor can be combined with an active material in composite electrodes for polymer lithium-ion batteries (LIBs). As interfaces are a key issue in LIBs, sputter deposition of Cu contacts on PS-b-PEO thin films with high PEO fraction is investigated with in situ grazing-incidence small-angle X-ray scattering (GISAXS) to follow the formation of the Cu layer in real-time. We observe a hierarchical morphology of Cu clusters building larger Cu agglomerates. Two characteristic distances corresponding to the PS-b-PEO microphase separation and the Cu clusters are determined. A selective agglomeration of Cu clusters on the PS domains explains the origin of the persisting hierarchical morphology of the Cu layer even after a complete surface coverage is reached. The spheroidal shape of the Cu clusters growing within the first few nanometers of sputter deposition causes a highly porous Cu–polymer interface. Four growth stages are distinguished corresponding to different kinetics of the cluster growth of Cu on PS-b-PEO thin films: (I) nucleation, (II) diffusion-driven growth, (III) adsorption-driven growth, and (IV) grain growth of Cu clusters. Percolation is reached at an effective Cu layer thickness of 5.75 nm.
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影响因子:
--
作者:
Kim, Tae Hee;Hwang, Jiyoung;Park, Cheolmin
通讯作者:
Park, Cheolmin
影响因子:
9.9
作者:
Monu Verma;V. Gupta;V. Dave;R. Chandra;G. K. Prasad
通讯作者:
G. K. Prasad
影响因子:
6.4
作者:
Metwalli, Ezzeldin;Kaeppel, Maximilian V.;Mueller-Buschbaum, Peter
通讯作者:
Mueller-Buschbaum, Peter
影响因子:
2.1
作者:
Lin, Y. -S.;Liu, H. -M.
通讯作者:
Liu, H. -M.
DOI:
10.1116/1.571105
发表时间:
1981-01-01
期刊:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
影响因子:
--
作者:
CRAIG, S;HARDING, GL
通讯作者:
HARDING, GL