Improved channel mobility of 4H-SiC n-MOSFETs by ultrahigh-temperature gate oxidation with low-oxygen partial-pressure cooling
Improved channel mobility of 4H-SiC n-MOSFETs by ultrahigh-temperature gate oxidation with low-oxygen partial-pressure cooling
复制标题
通过超高温栅极氧化和低氧分压冷却提高 4H-SiC n-MOSFET 的沟道迁移率
DOI：
10.7567/jjap.57.120304
复制
发表时间：
2018
影响因子：
1.5
通讯作者：
Heiji Watanabe
中科院分区：
文献类型：
--
作者：
M. Sometani;Yoshihito Katsu;Daisuke Nagai;H. Tsuji;T. Hosoi;T. Shimura;Y. Yonezawa;Heiji Watanabe
采用超高温栅氧化技术在4 H-SiC（0001）衬底上制备了具有高场效应迁移率（μFE）的n沟道金属氧化物半导体场效应晶体管（MOSFET），并采用低氧分压冷却工艺对其沟道迁移率进行了验证。通过在1450 °C、100%O2、1atm的环境中进行栅氧化，然后进行低氧分压（1%）快速冷却，获得了n-MOS和p-MOS电容器的理想平带电压和无杂散的漏电流-栅电压（Id-Vg）特性。根据Id-Vg特性，在纯O2栅氧化工艺下获得了15.8 cm 2 V−1 s−1的μFE。
An n-channel metal–oxide–semiconductor field-effect transistor (MOSFET) with high field-effect mobility (μFE) on 4H-SiC (0001) was fabricated using an ultrahigh-temperature gate-oxidation technique, and its improved channel mobility was demonstrated by employing a low-oxygen partial-pressure cooling procedure. The ideal flatband voltage for n-MOS and p-MOS capacitors and hysteresis-free drain current–gate voltage (Id–Vg) characteristics were obtained through gate oxidation at 1450 °C in 100% O2 ambient at 1 atm followed by the low-oxygen partial-pressure (1%) rapid-cooling procedure. From the Id–Vg characteristics, a μFE of 15.8 cm2 V−1 s−1 was obtained under the pure O2 gate-oxidation process.
影响因子：
4.9
作者：
Okamoto, Dai;Yano, Hiroshi;Fuyuki, Takashi
通讯作者：
Fuyuki, Takashi
影响因子：
3.2
作者：
Y. Fujino;K. Kita
通讯作者：
Y. Fujino;K. Kita
影响因子：
3.2
作者：
Negoro, Y;Katsumoto, K;Matsunami, H
通讯作者：
Matsunami, H