Magnetic switching of ferroelectric domains at room temperature in multiferroic PZTFT.

Magnetic switching of ferroelectric domains at room temperature in multiferroic PZTFT.
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DOI:
10.1038/ncomms2548
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发表时间:
2013
影响因子:
16.6
通讯作者:
--
中科院分区:
综合性期刊1区
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--
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单相磁电多铁性材料是表现出某种形式磁性的铁电材料。此外,磁序参数和铁电序参数并不是彼此独立的。因此,施加电场或磁场同时改变材料的电偶极子配置和磁性状态。磁电多铁性材料可能产生的技术可能性是巨大的,并且已经设想了一系列功能设备。然而,实现这些设备需要耦合效应显着并且在室温下发生。尽管这种特性可以在压电磁致伸缩复合材料中产生,但迄今为止,它们在单相多铁性材料中的表现还很微弱。在新发现的室温多铁性材料中,我们通过监测磁场引起的铁电畴图案的变化证明了显着的室温耦合。有效耦合系数的数量级估计表明值约为 1 × 10−7 sm−1。 具有铁磁和铁电耦合特性的多铁材料可用于非易失性数字存储的开发。埃文斯等人。报告了一种单相多铁材料,其室温磁电耦合似乎异常强。
Single-phase magnetoelectric multiferroics are ferroelectric materials that display some form of magnetism. In addition, magnetic and ferroelectric order parameters are not independent of one another. Thus, the application of either an electric or magnetic field simultaneously alters both the electrical dipole configuration and the magnetic state of the material. The technological possibilities that could arise from magnetoelectric multiferroics are considerable and a range of functional devices has already been envisioned. Realising these devices, however, requires coupling effects to be significant and to occur at room temperature. Although such characteristics can be created in piezoelectric-magnetostrictive composites, to date they have only been weakly evident in single-phase multiferroics. Here in a newly discovered room temperature multiferroic, we demonstrate significant room temperature coupling by monitoring changes in ferroelectric domain patterns induced by magnetic fields. An order of magnitude estimate of the effective coupling coefficient suggests a value of ~1 × 10−7 sm−1. Multiferroic materials that exhibit coupled ferromagnetic and ferroelectric characteristics could be useful in the development of non-volatile digital storage. Evans et al. report a single-phase multiferroic material whose room-temperature magnetoelectric coupling appears to be unusually strong.
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