Design of Lateral-Current-Injection-Type Membrane Distributed-Feedback Lasers for On-Chip Optical Interconnections
Design of Lateral-Current-Injection-Type Membrane Distributed-Feedback Lasers for On-Chip Optical Interconnections
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用于片上光互连的横向电流注入型膜分布式反馈激光器的设计
DOI：
10.1109/jstqe.2013.2244573
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
and S. Arai
中科院分区：
文献类型：
--
作者：
T. Shindo;M;Futami;K. Doi;T. Amemiya;N. Nishiyama;and S. Arai
为了应用于片上光互连，从低阈值电流工作和高速直接调制能力两个方面对有望成为这种应用的潜在组件的横向电流注入(LCI)膜分布反馈(DFB)激光器进行了研究。首先，通过对半绝缘InP衬底上制备的LCI法布里-珀罗激光器的小信号响应测量，评估了载流子注入延迟时间与条纹宽度的关系，发现较窄的条纹宽度有利于较短的载流子注入延迟时间和较高的内部量子效率。其次，从理论上研究了半导体芯层厚度对LCI-膜-DFB激光器的阈值电流、输出功率、弛豫振荡频率和3d B带宽等激光特性的影响。半导体薄膜结构中强烈的光学限制效应使激光器的阈值电流达到0.16 mA，输出功率大于0.16 mW，在偏置电流仅为1 mA的情况下，获得了8.9 GHz的高弛豫振荡频率。从这些值来看，LCI-膜-DFB激光器可以很好地作为低脉冲能量(<；；100fJ/比特)光源、高速(>；10 Gb/S)传输和片上光学互连的候选光源。
For application to on-chip optical interconnections, lateral-current-injection (LCI) membrane distributed-feedback (DFB) lasers, which are expected to be potential components for such an application, were investigated from the aspects of low threshold current operation and high-speed direct modulation capability. First, the stripe width dependence of the carrier injection delay time was evaluated from small-signal response measurements of LCI Fabry-Perot lasers prepared on a semi-insulating InP substrate, and it was found that a narrower stripe width was advantageous for shorter carrier injection delay time as well as higher internal quantum efficiency. Second, semiconductor core layer thickness dependences of the lasing properties of LCI-membrane-DFB lasers, such as the threshold current, output power, relaxation oscillation frequency, and a 3-dB bandwidth, were investigated theoretically. A strong optical confinement effect in the semiconductor membrane structure enabled the design of an LCI-membrane-DFB laser with a low threshold current of 0.16 mA, an output power of more than 0.16 mW, and a high relaxation oscillation frequency of 8.9 GHz at a bias current of only 1 mA. From these values, the LCI-membrane-DFB laser can be a good candidate for a low-pulse-energy (<;100 fJ/bit) light source, for high-speed (>10 Gb/s) transmission, and for on-chip optical interconnections.
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