Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment
Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment
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新开发的 n-in-p 平面像素传感器的测试光束评估，用于高辐射环境
DOI：
10.1016/j.nima.2016.04.004
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Kimura K
中科院分区：
文献类型：
--
作者：
Kimura K
耐辐射的n-in-p平面像素传感器一直在与Hamamatsu Photonics K.K.（HPK）。这是面向高辐射环境中的应用，例如未来的内部跟踪器（ITk）放置在高亮度LHC（HL-LHC）实验中ATLAS探测器的最内部。这些传感器的原型在过去几年中已经生产，辐照和评估。在以前的研究中，据报道，在辐照后观察到的检测效率显着下降，特别是在偏置结构。偏置结构由多晶硅或铝偏置轨和多晶硅偏置电阻组成。该结构在传感器上实现，以允许在凸点接合工艺之前执行质量检查，并确保由于非接触或缺失凸点接合而在浮置像素中生成的电荷以受控方式转储，以避免噪声。为了使效率下降最小化，已经设计了几种新的像素结构，其中偏置轨和偏置电阻器被重新定位。已经进行了几个测试光束，以评估新的传感器结构的检测效率照射后的下降。在东北大学的回旋加速器和放射性同位素中心（CYRIC），用质子束照射新开发的传感器模块，以观察传感器体损伤和表面充电的影响。高崎高级辐射研究中心还进行了γ射线辐照，目的是使表面电荷增加的效应与体损伤的效应脱钩。这些辐照过的传感器已经在DESY和CERN用粒子束进行了评估。不同的传感器结构之间的比较证实了显着的改善，在最大限度地减少效率损失的偏置结构照射后。γ辐射的结果还可以交叉检查半导体技术模拟程序（TCAD）的结果。
Radiation-tolerant n-in-p planar pixel sensors have been under development in cooperation with Hamamatsu Photonics K.K. (HPK). This is geared towards applications in high-radiation environments, such as for the future Inner Tracker (ITk) placed in the innermost part of the ATLAS detector in the high luminosity LHC (HL-LHC) experiment. Prototypes of those sensors have been produced, irradiated, and evaluated over the last few years. In the previous studies, it was reported that significant drops in the detection efficiency were observed after irradiation, especially under bias structures. The bias structures are made up of poly-Si or Al bias rails and poly-Si bias resistors. The structure is implemented on the sensors to allow quality checks to be performed before the bump-bonding process, and to ensure that charge generated in floating pixels due to non-contacting or missing bump-bonds is dumped in a controlled way in order to avoid noise. To minimize the efficiency drop, several new pixel structures have been designed with bias rails and bias resistors relocated. Several test beams have been carried out to evaluate the drops in the detection efficiency of the new sensor structures after irradiation. Newly developed sensor modules were irradiated with proton-beams at the Cyclotron and Radio-Isotope Center (CYRIC) in Tohoku University to see the effect of sensor-bulk damage and surface charge-up. An irradiation with γ-rays was also carried out at Takasaki Advanced Radiation Research Center, with the goal of decoupling the effect of surface charge-up from that of bulk damage. Those irradiated sensors have been evaluated with particle beams at DESY and CERN. Comparison between different sensor structures confirmed significant improvements in minimizing efficiency loss under the bias structures after irradiation. The results from γ-irradiation also enabled cross-checking the results of a semiconductor technology simulation program (TCAD).
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