Femtosecond Laser Deposition of Germanium Selenide onto Silicon Platform at Different Substrate Temperatures.
Femtosecond Laser Deposition of Germanium Selenide onto Silicon Platform at Different Substrate Temperatures.
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飞秒激光沉积硒化汁在不同的底物温度下在硅平台上。
DOI：
10.3390/nano12122003
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发表时间：
2022-06-10
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影响因子：
--
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采用飞秒脉冲激光沉积（fs-PLD）技术，在25 °C ~ 600 °C的不同衬底温度下，在硅（100）衬底上制备了硒化锗（GeSe）薄膜。利用透射电子显微镜（TEM）和X射线衍射（XRD）研究了薄膜的表面形貌和光学性能。X射线衍射结果表明，在低于400 °C的衬底温度下沉积在硅上的薄膜是非晶Ge-Se。相比之下，在400 °C及以上生长的样品显示出Ge-Se正交和四方结构的结晶峰。薄膜的沉积生长速率也被发现随衬底温度的升高而显著降低。这些结果表明，fs-PLD工艺在制备高质量Ge-Se薄膜方面具有很大的潜力。这种技术可以使现代光电子器件的制造应用在光通信，传感和双向阈值开关的高密度交叉存储器阵列。
Germanium selenide (GeSe) thin films were fabricated by employing femtosecond pulsed-laser deposition (fs-PLD) on silicon (100) substrates at various substrate temperatures, ranging from 25 °C to 600 °C. The thin films’ surface morphology qualities and optical properties were studied by utilising transmission electron microscopy (TEM) and X-ray diffraction (XRD). The X-ray diffraction result signifies that the thin films deposited on the silicon at a substrate temperature below 400 °C were amorphous Ge-Se. In contrast, those grown at 400 °C and above exhibited crystallised peaks of Ge-Se orthorhombic and tetragonal structures. The deposition growth rate of the thin films was also found to decrease substantially with increasing substrate temperature. These results show that the fs-PLD process has great potential for fabricating good quality Ge-Se thin film. This technique could enable the manufacture of modern optoelectronic devices for applications in optical communication, sensing, and ovonic threshold switching for the high-density crossbar memory array.
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影响因子：
4.6
作者：
Bouška M;Pechev S;Simon Q;Boidin R;Nazabal V;Gutwirth J;Baudet E;Němec P
通讯作者：
Němec P
影响因子：
2.1
作者：
MURANAKA, S;BANDO, Y;TAKADA, T
通讯作者：
TAKADA, T
影响因子：
3.5
作者：
Nayak, Barada K.;Gupta, Mool C.;Kolasinski, Kurt W.
通讯作者：
Kolasinski, Kurt W.
影响因子：
3.7
作者：
Jackson, K;Briley, A;Pederson, MR
通讯作者：
Pederson, MR
影响因子：
3.3
作者：
Edwards, T. G.;Sen, S.
通讯作者：
Sen, S.