InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application.
InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application.
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InAs/GaAs 量子点双模分布式反馈激光器走向大调谐范围连续波太赫兹应用
DOI：
10.1186/s11671-018-2674-3
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发表时间：
2018-09-04
影响因子：
--
通讯作者：
Zhang ZY
中科院分区：
文献类型：
--
作者：
Li QZ;Huang YQ;Ning JQ;Jiang C;Wang X;Chen HM;Li X;Zhang RY;Zhang K;Min JH;Peng Y;Zhang ZY
在本文中，制造了一种基于调制 p 掺杂多个 InAs/GaAs 量子点（QD）结构的横向耦合分布反馈（LC-DFB）激光器。该器件在连续波（CW）操作下表现出> 47 dB的高边模抑制比（SMSR）和dλ/dT = 0.092 nm/K的高热稳定性，这主要归功于调制p掺杂和快速热退火（RTA）工艺制备的高材料增益，以及浅蚀刻光栅及其紧邻激光脊特征的显着降低的波导损耗。 LC-DFB 激光器。凭借DFB激光器的这种优越性能，通过精细地定义激光脊两侧的光栅结构的不同周期或结合减小的激光腔长度，获得了宽范围可调谐双波长激光操作。两种激光模式之间的波长间隔可以在0.5至73.4 nm的非常宽的范围内灵活调谐，对应于0.10至14 THz的频率差，这是利用单个器件的最大调谐范围，从而为产生连续太赫兹辐射提供了新的机会。
In this paper, a laterally coupled distributed feedback (LC-DFB) laser based on modulation p-doped multiple InAs/GaAs quantum dot (QD) structures has been fabricated. The device exhibits a high side-mode suppression ratio (SMSR) of > 47 dB and a high thermal stability of dλ/dT = 0.092 nm/K under continuous-wave (CW) operation, which is mainly attributed to the high material gain prepared by modulation p-doping and rapid thermal annealing (RTA) process, and the significantly reduced waveguide losses by shallow-etched gratings and its close proximity to the laser ridge feature in the LC-DFB laser. With this superior performance of the DFB laser, the wide tunable dual-wavelength lasing operation has been obtained by delicately defining different periods for the grating structures on the two sides of the laser ridge or combining the reduced laser cavity length. The wavelength spacing between the two lasing modes can be flexibly tuned in a very wide range from 0.5 to 73.4 nm, corresponding to the frequency difference from 0.10 to 14 THz, which is the largest tuning range by the utilization of single device and hence providing a new opportunity towards the generation of CW THz radiation.
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