(K, Na)NbO3-based lead-free piezoelectric ceramics manufactured by two-step sintering
(K, Na)NbO3-based lead-free piezoelectric ceramics manufactured by two-step sintering
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两步烧结法制备(K,Na)NbO3基无铅压电陶瓷
DOI：
10.1016/j.ceramint.2011.11.022
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发表时间：
2012-04
影响因子：
5.2
通讯作者：
Jianzhou Du
中科院分区：
文献类型：
--
作者：
Xuming Pang;Jinhao Qiu;Kongjun Zhu;Jianzhou Du
采用两步烧结法制备了一种典型的Li和Ta/Sb改性的碱性硼酸盐基无铅压电陶瓷。研究了烧结条件对介电常数和压电性能的影响。在最佳工艺条件下制备的致密样品平均晶粒尺寸约为5μm，具有良好的介电和压电性能。值得注意的是，在“1130/10/1020/15”条件下烧结的（K0.4425Na0.52Li0.0375）（Nb0.8925Sb0.07Ta0.0375）O3陶瓷显示出压电系数（d33）、机电耦合系数（kp）和介电常数（ε）的峰值，分别为281 pC/N、50%和1500，这归因于典型的双峰晶粒尺寸分布的致密微观结构。此外，KNLNST陶瓷在宽温度范围内保持相对较低的介电损耗。结果表明，两步烧结法制备的KNLNST陶瓷具有良好的温度稳定性。
Two-step sintering was applied to manufacture a typical Li- and Ta/Sb-modified alkaline niobate-based lead-free piezoelectric ceramics. The sintering condition dependences of dielectric constants and piezoelectric properties were investigated. Under the optimal condition, dense specimens have an average grain size of approximately 5μm, and show good dielectric and piezoelectric properties. Significantly, the (K0.4425Na0.52Li0.0375) (Nb0.8925Sb0.07Ta0.0375)O3ceramics sintered under the condition “1130/10/1020/15” show the peak values of the piezoelectric coefficient (d33), electromechanical coupling coefficient (kp), and dielectric constant (ɛ), which are 281pC/N, 50% and 1500, respectively, owing to the densest microstructure of typical bimodal grain size distributions. Furthermore, the KNLNST ceramics maintain relatively low dielectric loss over wide temperature ranges. The result indicates that the KNLNST ceramics sintered by two-step sintering exhibit good temperature stability.
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DOI：
10.1016/j.mseb.2006.03.039
发表时间：
2006-07
影响因子：
3.6
作者：
Hongliang Du;Zhimin Li;Fusheng Tang;S. Qu;Z. Pei;Wan-cheng Zhou
通讯作者：
Hongliang Du;Zhimin Li;Fusheng Tang;S. Qu;Z. Pei;Wan-cheng Zhou
影响因子：
4.5
作者：
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通讯作者：
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影响因子：
3.9
作者：
Yunfei Chang;Zupei Yang;Lingling Wei
通讯作者：
Yunfei Chang;Zupei Yang;Lingling Wei
影响因子：
3.9
作者：
R. E. Jaeger;L. Egerton
通讯作者：
R. E. Jaeger;L. Egerton
影响因子：
64.8
作者：
Saito, Y;Takao, H;Nakamura, M
通讯作者：
Nakamura, M