High Transient-Thermal-Shock Resistant Nanochannel Tungsten Films.
High Transient-Thermal-Shock Resistant Nanochannel Tungsten Films.
复制标题
高瞬态热冲击纳米通道钨薄膜
DOI：
10.3390/nano11102663
复制
发表时间：
2021-10-11
期刊：
影响因子：
--
通讯作者：
Ren F
中科院分区：
文献类型：
--
作者：
Cheng T;Qin W;Lian Y;Liu X;Tang J;Cai G;Zhang S;Le X;Jiang C;Ren F
开发高性能的钨等离子体表面材料是一项紧迫的任务。本文采用磁控溅射沉积法制备了新型纳米通道结构W薄膜，采用高功率脉冲电子束或离子束辐照，研究了其边缘局域模式，如瞬态热冲击性能。在电子束辐照下，功率为150瓦特的1 μm厚纳米通道W薄膜在室温下的吸收功率密度相关裂纹阈值（0.28 ~ 0.43 GW/m2）高于商用体W （0.16 ~ 0.28 GW/m2）。在不同脉冲能量密度为1 J/cm2的离子束照射下，随着脉冲数的增加，体W出现了许多大的裂纹，而纳米通道W膜中只发现了几十纳米宽的微裂纹网络。针对纳米通道W薄膜高抗瞬态热冲击的机理，利用掠入射x射线衍射（GIXRD）对其进行了残余应力分析，结果表明，辐照后的纳米通道W薄膜的应力远低于辐照后的体W，这表明纳米通道结构由于其特殊的纳米通道结构和辐照缺陷湮灭能力，可以释放更多的应力。
Developing high-performance tungsten plasma-facing materials for fusion reactors is an urgent task. In this paper, novel nanochannel structural W films prepared by magnetron sputtering deposition were irradiated using a high-power pulsed electron beam or ion beam to study their edge-localized modes, such as transient thermal shock resistance. Under electron beam irradiation, a 1 μm thick nanochannel W film with 150 watt power showed a higher absorbed power density related cracking threshold (0.28–0.43 GW/m2) than the commercial bulk W (0.16–0.28 GW/m2) at room temperature. With ion beam irradiation with an energy density of 1 J/cm2 for different pulses, the bulk W displayed many large cracks with the increase of pulse number, while only micro-crack networks with a width of tens of nanometers were found in the nanochannel W film. For the mechanism of the high resistance of nanochannel W films to transient thermal shock, a residual stress analysis was made by Grazing-incidence X-ray diffraction (GIXRD), and the results showed that the irradiated nanochannel W films had a much lower stress than that of the irradiated bulk W, which indicates that the nanochannel structure can release more stress, due to its special nanochannel structure and ability for the annihilation of irradiation induced defects.
登录
查看更多内容
影响因子：
3.1
作者：
Davis, JW;Barabash, VR;Slattery, KT
通讯作者：
Slattery, KT
影响因子：
2.6
作者：
Li, Muyuan;Werner, Ewald;You, Jeong-Ha
通讯作者：
You, Jeong-Ha
影响因子：
3.1
作者：
Hirai, T.;Pintsuk, G.;Batilliot, M.
通讯作者：
Batilliot, M.
影响因子：
3.2
作者：
Cancellieri, C.;Moszner, F.;Jeurgens, L. P. H.
通讯作者：
Jeurgens, L. P. H.
影响因子：
3.1
作者：
Linke, J.;Escourbiac, F.;Suzuki, S.
通讯作者：
Suzuki, S.