Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy
Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy
复制标题
微通道选区金属有机气相外延初始成核对 Si 上 InAs 生长条件的依赖性
DOI：
10.1143/jjap.49.125601
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发表时间：
2010
影响因子：
1.5
通讯作者：
M. Sugiyama
中科院分区：
文献类型：
--
作者：
Y. Kondo;M. Deura;M. Takenaka;S. Takagi;Y. Nakano;M. Sugiyama
为了改善微通道选区外延生长的InGaAs横向岛的均匀性，利用表面反射率的原位监测，研究了三甲基铟（PTMIn）和叔丁基胂（PTBAs）分压对InAs初始成核的影响.高PTMIn导致短的孕育期、高密度的晶核和垂直生长，这表明高PTMIn适合于在每个生长区域中获得单核，这对于在Si上生长单畴晶体至关重要。横向生长的InAs核，这是优选的InGaAs晶体的横向生长，成功的InAs的初始成核，得到使用低PTMIn或高PTBAs，然而，后者的效果是不显着的。PTBA不影响潜伏期。通过调节PTMIn可以有效地控制InAs核的密度、均匀性和形状，但不能同时获得均匀性和横向形状。因此，我们设计了一个流量调制序列，并获得了InAs岛，在横向方向上生长，几乎充满了生长区域的单晶域。
In order to improve the uniformity of InGaAs lateral islands on Si grown by micro-channel selective area growth, we have investigated the dependences of initial InAs nucleation on the partial pressures of trimethylindium (PTMIn) and tertiary butylarsine (PTBAs) using the in situ monitoring of surface reflectivity. The high PTMIn resulted in a short incubation period, a high density of nuclei, and vertical growth, suggesting that a high PTMIn is suitable for obtaining single nuclei in each growth area, which is vital for the growth of single-domain crystals on Si. Laterally grown InAs nuclei, which are preferable for the lateral growth of InGaAs crystals that succeeds the initial nucleation of InAs, were obtained using either a low PTMIn or a high PTBAs, however, the effect of the latter was not significant. PTBAs did not affect the incubation period. The density, uniformity, and shape of InAs nuclei can be controlled effectively by adjusting PTMIn, but the uniformity and lateral shape could not be obtained simultaneously. We, therefore, devised a flow-modulated sequence and obtained InAs islands that grew in the lateral direction and almost filled the growth area with a single-crystal domain.
影响因子：
1.7
作者：
Takagi, S.;Tezuka, T.;Sugahara, S.
通讯作者：
Sugahara, S.
MOVPE 选择性生长 GaAs 纳米线，具有自对准 W 侧栅极
DOI：
--
发表时间：
2004
期刊：
Journal of Crystal Growth 272・1-4
影响因子：
--
作者：
Kamon J;Yamauchi T;Muto S;Takekawa S;Ito Y;Hada Y;Ogawa W;Itai A;Kasuga M;Tobe K;Kadowaki T.;ダニエル・フット;Mohan P;Takeda J;Nataraj D;Noborisaka J;Miyoshi Y;Noborisaka J;N.Ooike
通讯作者：
N.Ooike