Thickness effects of Bi0.89Ti0.11FeO3 thin films deposited on PbZr0.2Ti0.79Nb0.01O3 buffer layers
Thickness effects of Bi0.89Ti0.11FeO3 thin films deposited on PbZr0.2Ti0.79Nb0.01O3 buffer layers
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PbZr0.2Ti0.79Nb0.01O3 缓冲层上沉积 Bi0.89Ti0.11FeO3 薄膜的厚度效应
DOI：
10.1016/j.jallcom.2010.09.049
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发表时间：
2011-01
影响因子：
6.2
通讯作者：
W.B. Wu
中科院分区：
文献类型：
--
作者：
X.M. Chen;G.D. Hu;J.C. Wang;L. Cheng;C.H. Yang;W.B. Wu
采用金属有机物分解法在40 nm厚的PbZr0.2Ti0.79Nb0.01O3（PZTN）缓冲Pt（111）/Ti/SiO2/Si衬底上制备了厚度为200- 440 nm的Bi0.89Ti0.11FeO3薄膜。由于PZTN缓冲层具有良好的绝缘性能和高的击穿特性，Bi_（0.89）Tb_（0.11）FeO_3薄膜的漏电流显著降低。所有薄膜均表现出良好的饱和和矩形的P-E磁滞回线，没有任何明显的泄漏行为。所有Bi_（0.89）Ti_（0.11）FeO_3薄膜的剩余极化强度Pr和矫顽场E_c分别为45-50μC/cm ~ 2和200 kV/cm，且对薄膜厚度的依赖性很弱。200 nm厚的Bi 0.89 Ti 0.11 FeO 3薄膜具有较好的抗疲劳特性和电荷保持能力，PZTN缓冲层的抗老化能力较强，显著抑制了畴反转。
Bi0.89Ti0.11FeO3thin films with the thicknesses of 200–440nm were fabricated on the 40-nm-thick PbZr0.2Ti0.79Nb0.01O3(PZTN)-buffered Pt(111)/Ti/SiO2/Si substrates using a metal organic decomposition process. As a result of the good insulating property and high breakdown characteristic of the PZTN buffer layer, the leakage currents in the Bi0.89Tb0.11FeO3films are significantly reduced. All the films show well-saturated and rectangular P–E hysteresis loops without any evident leaky behavior. The remnant polarization Prand coercive field Ecfor all Bi0.89Ti0.11FeO3films are around 45–50μC/cm2and 200kV/cm, respectively, and show weak dependent on the film thickness. The 200-nm-thick Bi0.89Ti0.11FeO3film exhibits better fatigue-free characteristic and charge-retaining ability, and the domain backswitching is significantly restrained due to the strong anti-aging ability of the PZTN buffer layer.
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影响因子：
4
作者：
Das, R. R.;Kim, D. M.;Streiffer, S. K.
通讯作者：
Streiffer, S. K.
DOI：
10.1007/s00339-009-5366-0
发表时间：
2009-08
期刊：
Applied Physics A
影响因子：
--
作者：
Zheng Wen;G. Hu;Changhong Yang;Weibing Wu
通讯作者：
Zheng Wen;G. Hu;Changhong Yang;Weibing Wu
影响因子：
29.4
作者：
Jang, Ho Won;Ortiz, Daniel;Eom, Chang-Beom
通讯作者：
Eom, Chang-Beom
影响因子：
2.1
作者：
T. Haccart;D. Remiens;É. Cattan
通讯作者：
T. Haccart;D. Remiens;É. Cattan
影响因子：
56.9
作者：
Wang, J;Neaton, JB;Ramesh, R
通讯作者：
Ramesh, R