Electrotunable artificial molecules based on van der Waals heterostructures.
Electrotunable artificial molecules based on van der Waals heterostructures.
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基于范德华异质结构的电可调人工分子
DOI：
10.1126/sciadv.1701699
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发表时间：
2017-10
期刊：
影响因子：
13.6
通讯作者：
Guo GP
中科院分区：
文献类型：
--
作者：
Zhang ZZ;Song XX;Luo G;Deng GW;Mosallanejad V;Taniguchi T;Watanabe K;Li HO;Cao G;Guo GC;Nori F;Guo GP
在原子稀薄的MoS_2中，演示了从人造分子到人造原子的电控演化。量子限制使探测和操纵单电子电荷和自旋态成为可能。最近对二维(2D)材料的关注吸引了人们对可能应用于量子器件的浓厚兴趣，包括检测和操纵单电子充电行为或自旋和山谷自由度。然而，最流行的由可调谐双量子点分子组成的模型体系仍然很难在这些材料中实现。我们发现，在夹在六方氮化硼中的原子薄的MoS_2中可以可逆地形成人造分子，每个人造原子分别通过静电选通来控制。提取的不同区域的耦合能值表明了单电子输运行为，量子点之间的耦合强度是单调调节的。此外，在低密度区，我们观察到电导随磁场的变化而减小，这表明库仑阻塞对反局域化的影响很小。我们的实验首次证明了在门控MoS_2范德华异质结构中实现了人工量子点分子，这可以用来研究自旋谷物理。2D材料家族与大规模生产、栅极可控性、电子-空穴两极以及新的量子自由度的兼容性为量子电子学及其应用打开了新的可能性。
Electrically controlled evolution from an artificial molecule to an artificial atom in atomically thin MoS2 is demonstrated. Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications.
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