Doping concentration and thickness effects in ferroelectric thin films
Doping concentration and thickness effects in ferroelectric thin films
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铁电薄膜中的掺杂浓度和厚度效应
DOI：
10.1063/1.3364136
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发表时间：
2010-03
影响因子：
4
通讯作者：
唐明华
中科院分区：
文献类型：
--
作者：
唐明华
提出了一个理论模型，数值研究了掺杂浓度和厚度对铁电薄膜中电势和电场分布的影响。数值结果表明，薄膜的厚度和空间电荷浓度对薄膜的耗尽特性有很大的影响。结果表明，空间电荷密度的增加会增强电极界面附近的电场强度。在一定的厚度下，随着空间电荷密度的增加，薄膜的介电常数显著增加，极化强度显著减弱。建立了一个理论模型，数值分析了掺杂浓度和厚度对铁电薄膜中电势和电场分布的影响。数值结果表明，薄膜的厚度和空间电荷浓度对薄膜的耗尽特性有很大的影响。结果表明，空间电荷密度的增加会增强电极界面附近的电场强度。在一定的膜厚下，随着空间电荷密度的增加，薄膜的介电常数显著增加，极化强度显著减弱。
A theoretical model is presented to numerically examine the effects of doping concentration and thickness on potential and electric field distributions in ferroelectric thin films. The numerical results indicate that the film depletion is affected significantly by the thickness and the space charge concentration. It is found that the increase in the space charge density would strengthen the electric field in the vicinity of the electrode interface. We also found that the dielectric constant is enhanced and the film polarization is weakened remarkably with increasing the space charge density for a given film thickness.A theoretical model is presented to numerically examine the effects of doping concentration and thickness on potential and electric field distributions in ferroelectric thin films. The numerical results indicate that the film depletion is affected significantly by the thickness and the space charge concentration. It is found that the increase in the space charge density would strengthen the electric field in the vicinity of the electrode interface. We also found that the dielectric constant is enhanced and the film polarization is weakened remarkably with increasing the space charge density for a given film thickness.
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