Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications
Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications
复制标题
用于非易失性存储器应用的磁场控制混合半导体和电阻开关器件
DOI：
10.1063/1.5063734
复制
发表时间：
2019-10
期刊：
影响因子：
1.6
通讯作者：
X. Zhang
中科院分区：
文献类型：
--
作者：
C. Xiong;C. Chen;Z. Lu;H. Mou;X. Zhang
利用霍尔效应和阻性开关效应的耦合作用，制作了一种磁场可控非易失性存储器件。器件的非易失性是由于半导体的霍尔电压改变了阻性开关单元的电阻状态这一事实。通过改变器件配置，存储可以通过不同方向的磁场来控制。为了优化器件的性能，对半导体和阻性开关单元的参数进行了实验研究和模拟。提高通断比和降低功耗的关键是在半导体和阻性开关单元之间找到合适的电阻匹配。通过提高半导体的迁移率，器件的性能也可以显著提高。这种混合器件为磁场可控非易失性存储器件的制造提供了新的见解，具有集成计算和存储功能的潜力。通过耦合霍尔效应和电阻开关效应，制备了一种磁场可控非易失性存储器件。器件的非易失性是由于半导体的霍尔电压改变了阻性开关单元的电阻状态这一事实。通过改变器件配置，存储可以通过不同方向的磁场来控制。为了优化器件的性能，对半导体和阻性开关单元的参数进行了实验研究和模拟。提高通断比和降低功耗的关键是在半导体和阻性开关单元之间找到合适的电阻匹配。通过提高半导体的迁移率，器件的性能也可以显著提高。这种混合器件为磁场控制非易失性存储器件的制造提供了新的见解，具有集成计算和存储功能的潜力。
A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance state of the resistive switching unit. By changing the device configuration, the storage can be controlled by magnetic fields in different directions. The parameters of the semiconductors and the resistive switching units are experimentally investigated and simulated to optimize the performance of the devices. The key to increasing the ON/OFF ratio and reducing power consumption is finding a suitable resistance match between the semiconductor and the resistive switching unit. By enhancing the mobility of the semiconductor, the performance of the device can also be significantly improved. This hybrid device provides new insights into the manufacture of magnetic field controlled non-volatile memory devices with potential of integrating computing and storage functions.A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance state of the resistive switching unit. By changing the device configuration, the storage can be controlled by magnetic fields in different directions. The parameters of the semiconductors and the resistive switching units are experimentally investigated and simulated to optimize the performance of the devices. The key to increasing the ON/OFF ratio and reducing power consumption is finding a suitable resistance match between the semiconductor and the resistive switching unit. By enhancing the mobility of the semiconductor, the performance of the device can also be significantly improved. This hybrid device provides new insights into the manufacture of magnetic field controlled non-volatile memory devices with potential of integrating computing and storage func...
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影响因子：
56.9
作者：
Prinz
通讯作者：
Prinz
可重构磁逻辑与非易失性存储器写入相结合
影响因子：
29.4
作者：
Luo, Zhaochu;Lu, Ziyao;Zhang, Xiaozhong
通讯作者：
Zhang, Xiaozhong
影响因子：
4
作者：
Mark Johnson;B. R. Bennett;M. Yang;M. Miller;B. V. Shanabrook
通讯作者：
Mark Johnson;B. R. Bennett;M. Yang;M. Miller;B. V. Shanabrook
影响因子：
64.8
作者：
Dery, H.;Dalal, P.;Sham, L. J.
通讯作者：
Sham, L. J.
影响因子：
4.6
作者：
Popovic, RS;Randjelovic, Z;Manic, D
通讯作者：
Manic, D