Enhanced remnant polarization in ferroelectric Bi6Fe2Ti3O18 thin films
Enhanced remnant polarization in ferroelectric Bi6Fe2Ti3O18 thin films
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铁电 Bi6Fe2Ti3O18 薄膜中增强的剩余极化
DOI：
10.1039/c4ce02381a
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发表时间：
2015-02
期刊：
影响因子：
3.1
通讯作者：
Sun, Yuping
中科院分区：
文献类型：
--
作者：
Song, Wenhai;Yang, Jie;Zhu, Xuebin;Sun, Yuping
对于铁电存储器的实际应用，无毒的无铅铁电材料需要大的剩余极化。我们采用化学溶液沉积法在Pt/Ti/SiO2/Si（100）衬底上制备了Bi 6 Fe 2 Ti 3 O 18薄膜，并采用不同的退火工艺，发现在空气中快速热退火制备的Bi 6 Fe 2 Ti 3 O 18薄膜中存在一个清晰的铁电电滞回线和一个较大的剩余极化（Pr = 21.5 μC cm−2）。这一剩余极化值比用化学溶液淀积法和脉冲激光淀积法制备的Bi_2 WO_6、Bi_3 TiNb_O_9、Bi_4 Ti_3 O_（12）、Bi_5 Fe_2 Ti_3 O_（15）和Bi_6 Fe_2 Ti_3 O_（18）等铁电Aurivillius化合物薄膜的剩余极化值好上级。X射线衍射、高分辨透射电子显微镜、X射线光电子能谱和铁电P-E电滞回线的测试结果表明，晶粒尺寸、表面形貌、氧空位和晶格畸变对剩余极化起着重要作用。本研究为采用化学溶液沉积法制备具有大剩余极化率的层状Aurivillius薄膜提供了一条有效的途径。
For practical applications of ferroelectric memory, a large remnant polarization in nontoxic Pb-free ferroelectric materials is required. We prepared Bi6Fe2Ti3O18 thin films on Pt/Ti/SiO2/Si (100) substrates by chemical solution deposition using different annealing processes and found that a well-defined ferroelectric hysteresis loop with a rather large remnant polarization (Pr ≈ 21.5 μC cm−2) occurs in Bi6Fe2Ti3O18 thin films prepared by rapid thermal annealing in air. This value of remnant polarization is superior to those of other ferroelectric Aurivillius compounds such as Bi2WO6, Bi3TiNbO9, Bi4Ti3O12, Bi5FeTi3O15, and Bi6Fe2Ti3O18 thin films prepared by chemical solution deposition and pulsed laser deposition. The results of X-ray diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy and ferroelectric P–E hysteresis loops revealed that the grain size, surface morphologies, oxygen vacancies and lattice distortion play very important roles in the determination of the remnant polarization. The present study provides an effective route to prepare layered Aurivillius thin films with a large remnant polarization by chemical solution deposition.
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影响因子：
4
作者：
Baoling Yuan;J. Yang;Jizu Chen;X. Zuo;L. Yin;X. Tang;Xuming Zhu;J. Dai;Wen-li Song;Y. Sun
通讯作者：
Baoling Yuan;J. Yang;Jizu Chen;X. Zuo;L. Yin;X. Tang;Xuming Zhu;J. Dai;Wen-li Song;Y. Sun
影响因子：
3.2
作者：
Kai-Yun Yang;K. Fung;Moo-Chin Wang
通讯作者：
Kai-Yun Yang;K. Fung;Moo-Chin Wang
影响因子：
56.9
作者：
Lee, HN;Hesse, D;Gösele, U
通讯作者：
Gösele, U
影响因子：
3.9
作者：
X. Zuo;Jie Yang;B. Yuan;D. Song;Xianwu Tang;Kejun Zhang;Xuebin Zhu;W. Song;J. Dai;Yuping Sun
通讯作者：
X. Zuo;Jie Yang;B. Yuan;D. Song;Xianwu Tang;Kejun Zhang;Xuebin Zhu;W. Song;J. Dai;Yuping Sun
影响因子：
64.8
作者：
DEARAUJO, CAP;CUCHIARO, JD;SCOTT, JF
通讯作者：
SCOTT, JF