AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage
AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage
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击穿电压温度系数低于 mV/K 的 AlAsSb 雪崩光电二极管
DOI：
10.1109/jqe.2011.2165051
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发表时间：
2011
影响因子：
2.5
通讯作者：
C. Tan
中科院分区：
文献类型：
--
作者：
S. Xie;C. Tan
在雪崩区宽度为80和230 nm的AlAsSb p-i-n二极管上测量了暗电流和雪崩增益的温度依赖性。在77 ~ 295 K温度范围内的测量表明，暗电流随温度的降低而迅速减小，雪崩增益随温度的变化很小。在1.07 MV/cm的电场下（对应于击穿电压的95%的偏置），在较薄的二极管中没有观察到可测量的带间隧穿电流。分别从80和230 nm二极管获得0.95和1.47 mV/K的击穿电压的温度系数。这些明显低于具有类似雪崩区宽度的半导体材料的范围。我们的研究结果表明，使用薄的AlAsSb雪崩区，以实现低的温度系数的击穿电压，而不遭受高的带带隧穿电流的潜力。
The temperature dependence of dark current and avalanche gain were measured on AlAsSb p-i-n diodes with avalanche region widths of 80 and 230 nm. Measurements at temperatures ranging from 77 to 295 K showed that the dark current decreases rapidly with reducing temperature while avalanche gain exhibits a weak temperature dependence. No measurable band to band tunneling current was observed in the thinner diodes at an electric field of 1.07 MV/cm, corresponding to a bias of 95% of the breakdown voltage. Temperature coefficients of breakdown voltage of 0.95 and 1.47 mV/K were obtained from 80 and 230 nm diodes, respectively. These are significantly lower than a range of semiconductor materials with similar avalanche region widths. Our results demonstrated the potential of using thin AlAsSb avalanche regions to achieve low temperature coefficient of breakdown voltage without suffering from high band to band tunneling current.
影响因子：
2.5
作者：
Tan, Lionel Juen Jin;Ong, Daniel Swee Guan;David, John Paul Raj
通讯作者：
David, John Paul Raj
影响因子：
3.1
作者：
Goh, Y. L.;Massey, D. J.;Jones, S. K.
通讯作者：
Jones, S. K.