Design and Demonstration of 820-GHz Array Using Diode-Connected NMOS Transistors in 130-nm CMOS for Active Imaging
Design and Demonstration of 820-GHz Array Using Diode-Connected NMOS Transistors in 130-nm CMOS for Active Imaging
复制标题
使用 130 nm CMOS 中的二极管连接 NMOS 晶体管进行有源成像的 820 GHz 阵列的设计和演示
DOI：
10.1109/tthz.2015.2513061
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发表时间：
2016
影响因子：
3.2
通讯作者：
R. Han
中科院分区：
文献类型：
--
作者：
D. Kim;Shinwoong Park;R. Han
采用130 nm CMOS工艺，设计了一种820 GHz 8 × 8二极管连接的NMOS晶体管有源成像阵列，并在其上实现了像素选择电路。该架构的噪声性能可与最先进的MOSFET和肖特基二极管检波器阵列相媲美。成像阵列由一个行和列选择器，一个二极管连接的NMOS晶体管无源像素阵列，模拟多路复用器，和一个低噪声放大器银行。在823 GHz，它实现了2.56 kV/W的测量平均响应度与标准偏差为18%和36.2 pW/Hz 1/2的测量平均噪声等效功率（NEP）在1 MHz的调制频率与标准偏差为67%。在815至835 GHz之间，平均响应度大于~ 2 kV/W。12.6 pW/Hz 1/2的最小NEP是基于CMOS的探测器在~ 1 THz处的最低值。8 × 8成像阵列的面积为2.0 × 1.7mm ~ 2，功耗为9.6mW。减小器件尺寸以支持工作频率的增加预计会增加可变性，因此需要采取缓解措施。像素的测量访问时间约为40 nS。一行中可以连接的元素数量由调制频率决定，可以超过1000个元素，同时支持大于每秒1000个的帧速率。最后，推导并给出了可用于探测器优化的响应度和包含1/f噪声的NEP的表达式。
An 820-GHz 8 × 8 diode-connected NMOS transistor active imaging array with an on-chip pixel selection circuit was demonstrated in a 130-nm CMOS technology. The noise performance of this architecture is comparable to the state-of-the-art MOSFET and Schottky diode detector arrays. The imaging array consists of a row and column selector, an array of diode-connected NMOS transistor passive pixels, an analog multiplexer, and a low-noise amplifier bank. At 823 GHz, it achieves 2.56 kV/W of measured mean responsivity with a standard deviation of 18% and 36.2 pW/Hz1/2 of measured mean noise equivalent power (NEP) at 1-MHz modulation frequency with a standard deviation of 67%. The mean responsivity is greater than ~ 2 kV/W between 815 to 835 GHz. The minimum NEP of 12.6 pW/Hz1/2 is the lowest for CMOS based detectors at ~ 1 THz. The 8 × 8 imaging array occupies 2.0 × 1.7 mm2 and consumes 9.6 mW of power. Reducing device sizes to support the increase of operating frequency is expected to increase the variability and mitigation approaches will be required. The measured access time for the pixel is ~ 40 nS. The number of elements that can be connected in a row is determined by the modulation frequency and can be more than 1000 elements while supporting a frame rate greater than 1000 per second. Lastly, the expressions of responsivity and NEP including 1/f noise that can be used for the detector optimization are derived and presented .
影响因子：
5.4
作者：
Al Hadi, Richard;Sherry, Hani;Pfeiffer, Ullrich R.
通讯作者：
Pfeiffer, Ullrich R.
DOI：
10.1109/rfic.2011.5940670
发表时间：
2011-06
期刊：
2011 IEEE Radio Frequency Integrated Circuits Symposium
影响因子：
--
作者：
H. Sherry;R. Al Hadi;J. Grzyb;E. Ojefors;A. Cathelin;A. Kaiser;U. Pfeiffer
通讯作者：
H. Sherry;R. Al Hadi;J. Grzyb;E. Ojefors;A. Cathelin;A. Kaiser;U. Pfeiffer
采用高性能 SiGe HBT 技术的太赫兹探测器阵列
DOI：
10.1109/bctm.2012.6352643
发表时间：
2012
期刊：
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
影响因子：
--
作者：
R. Al Hadi;J. Grzyb;B. Heinemann;U. Pfeiffer
通讯作者：
U. Pfeiffer