Study on pure and Nd-doped BiFeO3 thin films prepared by chemical solution deposition method
Study on pure and Nd-doped BiFeO3 thin films prepared by chemical solution deposition method
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化学溶液沉积法制备纯BiFeO3及掺NdBiFeO3薄膜的研究
DOI：
10.1016/j.jallcom.2014.03.122
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发表时间：
2014-08
影响因子：
6.2
通讯作者：
Hao Hangfei
中科院分区：
文献类型：
--
作者：
Xue Xu;Tan Guoqiang;Liu Wenlong;Hao Hangfei
采用化学溶液沉积法在FTO衬底上沉积了不同前驱体组成的多晶BiFeO3（BFO）薄膜和Bi1−xNdxFeO3（BNFO,x= 0.06-0.20）薄膜。目前的数据表明，前驱体起着至关重要的作用，即BFO膜的微观结构、形貌和铁电性能与乙酸酐的比例密切相关。XRD分析和拉曼光谱分析表明，随着乙酸酐用量的增加，结构由菱面体向四边形转变。研究了Nd对材料微观结构、化学状态、介电、铁电、磁性和光学性能的影响。通过XRD和拉曼散射光谱分析，证明了随着Nd含量的增加，结构发生了转变。x射线光电子能谱证实了BNFO薄膜中Fe2+的形成和Bi的价态波动。钕含量为15%的样品具有最强的铁电极化和磁电容。由于其准电性质和正交结构，在BNFO （x= 0.20）薄膜中观察到铁电极化的急剧减少和最强的磁化。随着Nd含量的增加，BNFO薄膜的带隙减小，带隙大小为（2.45 ~ 0.024x） eV。
Polycrystalline BiFeO3(BFO) films with varying precursor composition and Bi1−xNdxFeO3(BNFO,x= 0.06–0.20) films were deposited on FTO substrates by using a chemical solution deposition method. Present data indicated that the precursor played a crucial role, i.e., microstructure, morphology and ferroelectric properties of the BFO film are closely related to the proportion of acetic anhydride. XRD analysis and Raman spectra revealed a structural transition from rhombohedral to tetragonal as the amount of acetic anhydride was increased. The effect of Nd on microstructure, chemical state, dielectric, ferroelectric, magnetic and optical properties has been investigated. A structural transition with increasing Nd content was proved by using XRD and Raman scattering spectra. X-ray photoelectron spectroscopy confirmed the formation of Fe2+and the valence fluctuation of Bi of the BNFO films. The strongest ferroelectric polarization and magnetocapacitance were obtained in the sample with 15% Nd. A dramatic reduction in ferroelectric polarization and the strongest magnetization were observed in the BNFO (x= 0.20) film due to its paraelectric nature and orthorhombic structure. With increasing Nd content, the band gap of the BNFO films decreased withEg= (2.45 − 0.024x) eV.
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影响因子：
4
作者：
Yibin Li;T. Sritharan;Sam Zhang;Xiaodong He;Yang Liu;Tupei Chen
通讯作者：
Yibin Li;T. Sritharan;Sam Zhang;Xiaodong He;Yang Liu;Tupei Chen
影响因子：
3.7
作者：
Lobo, R. P. S. M.;Moreira, R. L.;Colson, D.
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影响因子：
6.2
作者：
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H. Sharma;N. B. Singh;K. Devi;J. Lee;S. B. Singh
影响因子：
6.2
作者：
Xianwu Tang;J. Dai;Xuebin Zhu;W. Song;Yuping Sun
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Xianwu Tang;J. Dai;Xuebin Zhu;W. Song;Yuping Sun
影响因子：
5.4
作者：
C. M. Raghavan;H. Kim;J. Kim;S. S. Kim-S.
通讯作者：
C. M. Raghavan;H. Kim;J. Kim;S. S. Kim-S.