Optimization of process parameters for the electrical properties in Ga-doped ZnO thin films prepared by r.f. magnetron sputtering
Optimization of process parameters for the electrical properties in Ga-doped ZnO thin films prepared by r.f. magnetron sputtering
复制标题
射频制备Ga掺杂ZnO薄膜电性能工艺参数优化
DOI：
10.1016/j.apsusc.2014.01.163
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发表时间：
2014-04
影响因子：
6.7
通讯作者：
Y.M. Lu
中科院分区：
文献类型：
--
作者：
D.L. Zhu;Q. Wang;S. Han;P.J. Cao;W.J. Liu;F. Jia;Y.X. Zeng;X.C. Ma;Y.M. Lu
Ga-doped ZnO (GZO) transparent conductive thin films have been deposited on quartz substrates by r.f. magnetron sputtering. The optimization of four process parameters (i.e., vacuum annealing temperature, r.f. power, sputtering pressure, and Ar flow rate) based on Taguchi method has been systematically studied in order to obtain the minimum resistivity. Compared to the optimal parameter set selected from orthogonal array by Taguchi method, the optimal prediction design can receive an improvement of 22.3% in electrical resistivity, and the corresponding resistivity is 8.08 × 10−4Ω cm. The analysis of variance shows that vacuum annealing temperature is the most significant influencing parameter on the electrical properties in GZO films. X-ray photoelectron spectroscopy and photoluminescence results exhibit that the enhancement in electrical conductivity after vacuum annealing is ascribed to the variation of the chemical states of oxygen in GZO films. With the increase in annealing temperature, the content of absorbed oxygen and interstitial oxygen as acceptors will decrease.
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影响因子：
5.4
作者：
Peng, Kun-Cheng;Lin, Jing-Chie;Lee, Sheng-Long
通讯作者：
Lee, Sheng-Long
影响因子：
3.1
作者：
C. Chu;C. Huang;L. M. Kao;C. Chou;C. Hsu;C. W. Chen;D. Chen
通讯作者：
C. Chu;C. Huang;L. M. Kao;C. Chou;C. Hsu;C. W. Chen;D. Chen
射频磁控溅射生长重Ga掺杂氧化锌的生长后退火研究
DOI：
10.1088/0022-3727/46/13/135104
发表时间：
2013-04
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
作者：
Su, S. C.;Ling, C. C.;Lu, Y. M.;Zhu, D. L.
通讯作者：
Zhu, D. L.
影响因子：
--
作者：
Alvi NH;Ul Hasan K;Nur O;Willander M
通讯作者：
Willander M
影响因子：
9.4
作者：
Yongseon Kim;Shinhoo Kang
通讯作者：
Yongseon Kim;Shinhoo Kang