Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures
Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures
复制标题
高温辐照下纳米晶碳化硅的晶粒尺寸变化
DOI：
10.1111/jace.15895
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发表时间：
2018-07
影响因子：
3.9
通讯作者：
Wang Tieshan
中科院分区：
文献类型：
--
作者：
Zhang Limin;Jiang Weilin;Ai Wensi;Chen Liang;Pan Chenlong;Wang Tieshan
本研究报告的离子辐照引起的晶粒尺寸变化的纳米晶SiC薄膜在Si衬底上。SiC颗粒的平均尺寸为2 ~ 20 nm，镶嵌在非晶SiC基体中。在700 K下，用5 MeV的Xe ~（23+）离子辐照，辐照剂量为1.15 × 10 ~（16）ions/cm ~ 2。使用X射线衍射、透射电子显微镜和拉曼光谱对辐照膜进行表征。对于倾向于在~8 nm处饱和的较小晶粒，观察到显著的晶粒生长。相比之下，较大晶粒（尺寸约20 nm）的辐照导致晶粒尺寸减小，这可能与晶粒内晶格无序的产生有关。发现辐照后的非晶SiC基体中的HomocyanC-C键被石墨化。这种键合转变可以限制或抑制晶粒生长，并有助于尺寸饱和。这项研究的结果表明，纳米SiC作为一个有前途的候选人在先进的核反应堆的应用结构或包层材料。
This study reports on ion irradiation‐induced grain size variations in nanocrystalline SiC films on Si substrates. The SiC grains with average size ranging from ~2 to 20 nm were embedded in amorphous SiC matrices. Irradiation was performed using 5 MeV Xe23+ions to 1.15 × 1016ions/cm2at 700 K. The irradiated films were characterized using X‐ray diffraction, transmission electron microscopy, and Raman spectroscopy. Significant grain growth is observed for smaller grains that tend to saturate at ~8 nm. In contrast, irradiation of larger grains (~20 nm in size) leads to a decrease in the grain size, which could be associated with the production of lattice disorder within the grains. Homonuclear C‐C bonds in the irradiated amorphous SiC matrix are found to be graphitized. This bonding transformation could limit or inhibit grain growth and contribute to the size saturation. The results from this study may suggest nanocrystalline SiC as a promising candidate structural or cladding material for applications in advanced nuclear reactors.
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DOI：
10.1088/0022-3727/49/3/035304
发表时间：
2016-01
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
作者：
Limin Zhang;Weilin Jiang;A. Dissanayake;T. Varga;Jiandong Zhang;Zihua Zhu;Dehong Hu;Haiyan Wang;C. Henager;Tieshan Wang
通讯作者：
Limin Zhang;Weilin Jiang;A. Dissanayake;T. Varga;Jiandong Zhang;Zihua Zhu;Dehong Hu;Haiyan Wang;C. Henager;Tieshan Wang
DOI：
10.1039/c2cp42342a
发表时间：
2012-09
期刊：
Physical chemistry chemical physics : PCCP
影响因子：
--
作者：
Yanwen Zhang;M. Ishimaru;T. Varga;T. Oda;Chris Hardiman;H. Xue;Y. Katoh;S. Shannon;W. J. Weber-W.
通讯作者：
Yanwen Zhang;M. Ishimaru;T. Varga;T. Oda;Chris Hardiman;H. Xue;Y. Katoh;S. Shannon;W. J. Weber-W.
影响因子：
3.7
作者：
Ferrari, AC;Robertson, J
通讯作者：
Robertson, J
DOI：
10.1016/0168-583x(96)00016-x
发表时间：
1995-12
影响因子：
1.3
作者：
S. Zinkle;L. Snead
通讯作者：
S. Zinkle;L. Snead
影响因子：
3.2
作者：
C. Serre;L. Calvo‐Barrio;A. Pérez‐Rodríguez;A. Romano-Rodríguez;J. Morante;Y. Pacaud;R. Kögler;V. Heera;W. Skorupa
通讯作者：
C. Serre;L. Calvo‐Barrio;A. Pérez‐Rodríguez;A. Romano-Rodríguez;J. Morante;Y. Pacaud;R. Kögler;V. Heera;W. Skorupa