DNA multi-bit non-volatile memory and bit-shifting operations using addressable electrode arrays and electric field-induced hybridization.
DNA multi-bit non-volatile memory and bit-shifting operations using addressable electrode arrays and electric field-induced hybridization.
复制标题
DNA多位的非易失性记忆和使用可寻址电极阵列和电场诱导的杂交的位转移操作。
DOI：
10.1038/s41467-017-02705-8
复制
发表时间：
2018-01-18
影响因子：
16.6
通讯作者：
Huang X
中科院分区：
文献类型：
--
作者：
Song Y;Kim S;Heller MJ;Huang X
DNA已被用于存储数字信息或执行并行分子计算。将基于dna的记忆和逻辑操作结合在一个平台上的能力相对来说还没有被开发出来。在这里，我们展示了一个DNA三电平单元非易失性存储系统，该系统能够并行随机访问存储器写入和位移位操作。采用带有可单独寻址电极阵列的微芯片，利用电场实现对存储单元的随机存取。DNA模板分子上的三个片段被用来编码三个数据位。通过荧光标记互补探针的电场诱导杂交实现数据位的快速写入，并通过荧光成像读取数据位。我们演示了8（23）个3位存储数据组合的快速并行写入和读取，以及通过电场诱导链位移进行的位移位操作。我们的系统可能会在基于dna的存储和计算中找到潜在的应用。基于DNA的技术有望用于非易失性存储器和计算任务，但相对缓慢的杂交动力学仍然是瓶颈。在这里，Song等人开发了一个电场诱导杂交平台，可以加速多比特存储和逻辑运算。
DNA has been employed to either store digital information or to perform parallel molecular computing. Relatively unexplored is the ability to combine DNA-based memory and logical operations in a single platform. Here, we show a DNA tri-level cell non-volatile memory system capable of parallel random-access writing of memory and bit shifting operations. A microchip with an array of individually addressable electrodes was employed to enable random access of the memory cells using electric fields. Three segments on a DNA template molecule were used to encode three data bits. Rapid writing of data bits was enabled by electric field-induced hybridization of fluorescently labeled complementary probes and the data bits were read by fluorescence imaging. We demonstrated the rapid parallel writing and reading of 8 (23) combinations of 3-bit memory data and bit shifting operations by electric field-induced strand displacement. Our system may find potential applications in DNA-based memory and computations. DNA based technology holds promise for non-volatile memory and computational tasks, yet the relatively slow hybridization kinetics remain a bottleneck. Here, Song et al. have developed an electric field-induced hybridization platform that can speed up multi-bit memory and logic operations.
登录
查看更多内容
影响因子：
14.9
作者：
Egeland RD;Southern EM
通讯作者：
Southern EM
影响因子：
56.9
作者：
LIPTON, RJ
通讯作者：
LIPTON, RJ
影响因子：
56.9
作者：
Church, George M.;Gao, Yuan;Kosuri, Sriram
通讯作者：
Kosuri, Sriram
影响因子：
12.6
作者：
Ghindilis, Andrey L.;Smith, Maria W.;McShea, Andy
通讯作者：
McShea, Andy
影响因子：
64.8
作者：
Goldman, Nick;Bertone, Paul;Chen, Siyuan;Dessimoz, Christophe;LeProust, Emily M.;Sipos, Botond;Birney, Ewan
通讯作者：
Birney, Ewan