Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes
Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes
复制标题
铟对 InGaN/GaN MQW 发光二极管偏振电致发光的影响
DOI：
10.1088/0256-307x/26/8/087802
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发表时间：
2009-08
影响因子：
3.5
通讯作者：
Yu Tong-Jun
中科院分区：
文献类型：
--
作者：
Zhang Guo-Yi;Tao Ren-Chun;Wang Zhan-Guo;Jia Chuan-Yu;Ruan Jun;Yu Tong-Jun
Polarization-resolved edge-emitting electroluminescence (EL) studies of InGaN/GaN MQWs of wavelengths from near-UV (390 nm) to blue (468 nm) light-emitting diodes (LEDs) are performed. Although the TE mode is dominant in all the samples of InGaN/GaN MQW LEDs, an obvious difference of light polarization properties is found in the InGaN/GaN MQW LEDs with different wavelengths. The polarization degree decreases from 52.4% to 26.9% when light wavelength increases. Analyses of band structures of InGaN/GaN quantum wells and luminescence properties of quantum dots imply that quantum-dot-like behavior is the dominant reason for the low luminescence polarization degree of blue LEDs, and the high luminescence polarization degree of UV LEDs mainly comes from QW confinement and the strain effect. Therefore, indium induced carrier confinement (quantum-dot-like behavior) might play a major role in the polarization degree change of InGaN/GaN MQW LEDs from near violet to blue.
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影响因子：
3.2
作者：
Y. Yeo;T. Chong;Ming-Fu Li;W. Fan
通讯作者：
Y. Yeo;T. Chong;Ming-Fu Li;W. Fan
影响因子：
1.9
作者：
S L Chuang;C S Chang
通讯作者：
S L Chuang;C S Chang
影响因子：
4
作者：
T. Kita;N. Tamura;O. Wada;M. Sugawara;Y. Nakata;H. Ebe;Y. Arakawa
通讯作者：
T. Kita;N. Tamura;O. Wada;M. Sugawara;Y. Nakata;H. Ebe;Y. Arakawa
DOI：
10.1002/pssa.200880404
发表时间：
2009-02
期刊：
physica status solidi (a)
影响因子：
--
作者：
R. Tao;T. Yu;C. Jia;Zhizhong Chen;Zhixin Qin;Guoyi Zhang
通讯作者：
R. Tao;T. Yu;C. Jia;Zhizhong Chen;Zhixin Qin;Guoyi Zhang
影响因子：
1.6
作者：
C. Humphreys
通讯作者：
C. Humphreys