Study on Reactive Species in Catalyst-Referred Etching of 4H–SiC using Platinum and Hydrofluoric Acid
Study on Reactive Species in Catalyst-Referred Etching of 4H–SiC using Platinum and Hydrofluoric Acid
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铂和氢氟酸催化蚀刻 4H-SiC 中反应物种的研究
DOI：
10.4028/www.scientific.net/msf.740-742.847
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
K. Yamauchi
中科院分区：
文献类型：
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作者：
A. Isohashi;Y. Sano;T. Okamoto;K. Tachibana;Kenta Arima;K. Inagaki;K. Yagi;Shun Sadakuni;Y. Morikawa;K. Yamauchi
在这项研究中，我们开发了一种新的无磨料抛光方法，称为催化剂参考蚀刻（CARE）。CARE可以用催化剂激活的蚀刻剂化学去除SiC。铂和氢氟酸分别作为催化剂和蚀刻剂用于SiC衬底的平面化。无论截止角度如何，CARE都可以制备出4H-SiC（0001）的原子平面，其均方根粗糙度小于<0.1 nm。然而，迄今为止，CARE的机制尚未明确。本研究通过在蚀刻剂中加入KF和NH4F来阐明其作用机理。去除率的研究表明，去除率与[HF]×（[F^-]+[〖HF_2〗^-]）成正比，表明HF分子和氟离子（F−和HF2−）都是CARE过程的反应物质，HF分子和氟离子（F-和HF2-）都是CARE过程的反应物质。
In this study, we developed aA novel abrasive-free polishing method called the catalyst-referred etching (CARE) has been developed. CARE can chemically remove SiC chemically with using an etching agent activated by a catalyst. Platinum and hydrofluoric (HF) acid are used for the planarization of SiC substrates as a catalyst and etchant, respectively. CARE can produce an atomically flat surface of 4H–SiC (0001) with a root-mean-square roughness of less than <0.1 nm, regardless of the cut-off angle. However, the mechanism of CARE has hasis not yet been clarified to date. In this study, to clarify the mechanism, KF and NH4F are added to the etchant to clarify the mechanism. The An investigation of removal rate revealeds that the removal rate is proportional to [HF]×([F^- ]+[〖HF_2〗^- ]), and it is shown that both the HF molecule and fluorine ions (F− and HF2−) arethe reactive species of the CARE process are both HF molecule and fluorine ions (F- and HF2-).
影响因子：
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作者：
Okamoto, Takeshi;Sano, Yasuhisa;Yamauchi, Kazuto
通讯作者：
Yamauchi, Kazuto
通过催化剂蚀刻降低表面粗糙度
DOI：
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发表时间：
2009
期刊：
影响因子：
--
作者：
T.Okamoto;Y.Sano;K.Tachibana;K.Arima;A.N.Hattori;K.Yagi;J.Murata;S.Sadakuni;K.Yamauchi;Takeshi Okamoto;Takeshi Okamoto;橘一真;岡本武志;岡本武志;橘一真;岡本武志;岡本武志;岡本武志
通讯作者：
岡本武志