Unusual Deformation and Fracture in Gallium Telluride Multilayers.
Unusual Deformation and Fracture in Gallium Telluride Multilayers.
复制标题
DOI：
10.1021/acs.jpclett.2c00411
复制
发表时间：
2022-05-05
影响因子：
5.7
通讯作者：
Kuball, Martin
中科院分区：
文献类型：
--
作者：
Zhou, Yan;Zhou, Shi;Ying, Penghua;Zhao, Qinghua;Xie, Yong;Gong, Mingming;Jiang, Pisu;Cai, Hui;Chen, Bin;Tongay, Sefaattin;Zhang, Jin;Jie, Wanqi;Wang, Tao;Tan, Pingheng;Liu, Dong;Kuball, Martin
二维（2D）材料的变形和断裂机制仍不明确，也未得到充分研究。鉴于此，以碲化镓（GaTe）为例探索其力学性能和机制，GaTe是一种具有超高光响应性和高柔韧性的有前景的二维半导体。在此，通过贝氏压头纳米压痕法而非常用的基于原子力显微镜的纳米压痕法研究了衬底支撑和悬浮的GaTe多层膜的力学性能。在加载曲线中观察到了多个突入（pop - in）和载荷下降事件的异常同时发生。理论计算揭示这种同时发生源于GaTe多层膜中层间滑动介导的逐层断裂机制。研究表明，GaTe与衬底之间以范德华力为主的层间相互作用比GaTe层间的相互作用强得多，这导致GaTe内多层膜容易滑动和断裂。这项工作为GaTe及其他二维材料在柔性电子应用中的变形和断裂提供了新的见解。
The deformation and fracture mechanism of two-dimensional (2D) materials are still unclear and not thoroughly investigated. Given this, mechanical properties and mechanisms are explored on example of gallium telluride (GaTe), a promising 2D semiconductor with an ultrahigh photoresponsivity and a high flexibility. Hereby, the mechanical properties of both substrate-supported and suspended GaTe multilayers were investigated through Berkovich-tip nanoindentation instead of the commonly used AFM-based nanoindentation method. An unusual concurrence of multiple pop-in and load-drop events in loading curve was observed. Theoretical calculations unveiled this concurrence originating from the interlayer-sliding mediated layers-by-layers fracture mechanism in GaTe multilayers. The van der Waals force dominated interlayer interactions between GaTe and substrates was revealed much stronger than that between GaTe interlayers, resulting in the easy sliding and fracture of multilayers within GaTe. This work introduces new insights into the deformation and fracture of GaTe and other 2D materials in flexible electronics applications.
登录
查看更多内容
影响因子：
17.1
作者：
Guo, Yao;Liu, Chunru;Chai, Yang
通讯作者：
Chai, Yang
影响因子：
29.4
作者：
Castellanos-Gomez, Andres;Poot, Menno;Rubio-Bollinger, Gabino
通讯作者：
Rubio-Bollinger, Gabino
去细化导致硅的纳米级可塑性发生变化
影响因子：
38.3
作者：
Chrobak, Dariusz;Tymiak, Natalia;Nowak, Roman
通讯作者：
Nowak, Roman
影响因子：
9.9
作者：
Hu, Pingan;Zhang, Jia;Xiao, Kai
通讯作者：
Xiao, Kai
影响因子：
64.8
作者：
Kim, Keun Soo;Zhao, Yue;Hong, Byung Hee
通讯作者：
Hong, Byung Hee