Laser Thinning and Patterning of MoS(2) with Layer-by-Layer Precision.

Laser Thinning and Patterning of MoS(2) with Layer-by-Layer Precision.
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逐层精确地对 MoS2 进行激光减薄和图案化

DOI:
10.1038/s41598-017-15350-4
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发表时间:
2017-11-14
期刊:
影响因子:
4.6
通讯作者:
Lu X
Lu X
中科院分区:
综合性期刊3区
文献类型:
--
作者:
Hu L;Shan X;Wu Y;Zhao J;Lu X

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最近发现的二维材料的新特性在很大程度上依赖于其电子结构和晶格对称性的层临界变化。因此,实现逐层精确图案化对于结制造和器件工程至关重要,这迄今为止构成了前所未有的挑战。在这里,我们展示了激光减薄和图案化与逐层精度在二维(2D)量子材料MoS2。通过精确的垂直和横向控制生产单层、双层和三层MoS 2薄膜,消除了制造由不同层和图案组成的新型三维(3D)器件的挤出障碍。通过调整激光能量密度和曝光时间,我们证明生产二硫化钼图案与设计的层数。基本的物理机制被确定为温度依赖的蒸发的二硫化钼晶格,验证了我们的测量和计算。我们的研究为基于2D层状量子材料的3D器件制造铺平了道路。
The recently discovered novel properties of two dimensional materials largely rely on the layer-critical variation in their electronic structure and lattice symmetry. Achieving layer-by-layer precision patterning is thus crucial for junction fabrications and device engineering, which hitherto poses an unprecedented challenge. Here we demonstrate laser thinning and patterning with layer-by-layer precision in a two dimensional (2D) quantum material MoS2. Monolayer, bilayer and trilayer of MoS2 films are produced with precise vertical and lateral control, which removes the extruding barrier for fabricating novel three dimensional (3D) devices composed of diverse layers and patterns. By tuning the laser fluence and exposure time we demonstrate producing MoS2 patterns with designed layer numbers. The underlying physics mechanism is identified to be temperature-dependent evaporation of the MoS2 lattice, verified by our measurements and calculations. Our investigation paves way for 3D device fabrication based on 2D layered quantum materials.
MOS2的超薄膜和相关过渡金属二核苷的超薄膜的自旋极化和电子结构的厚度依赖性。
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