Gate voltage dependence of weak localization in bilayer graphene
Gate voltage dependence of weak localization in bilayer graphene
复制标题
双层石墨烯中弱局域化的栅极电压依赖性
DOI：
10.1063/1.3505310
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发表时间：
2010-10
影响因子：
4
通讯作者：
Liao, Zhi-Min
中科院分区：
文献类型：
--
作者：
Han, Bing-Hong;Wu, Han-Chun;Yu, Da-Peng;Liao, Zhi-Min
实验研究了双层石墨烯中弱局域化受栅压调制的情况。发现了从载流子电荷中性点（CNP）附近的弱定域到远离CNP的弱反定域的转变，原子级尖锐缺陷的屏蔽和栅压调控的自旋轨道耦合抑制了谷间散射，这可以很好地解释实验结果.我们的实验结果证实了理论预测，即双层石墨烯中的弱局域化被三角扭曲强烈抑制，并且仅存在于具有明显谷间散射的系统中。
Weak localization modulated by gate voltage in bilayer graphene was studied experimentally. A transition from weak localization [near the carrier charge neutrality point (CNP)] to weak antilocalization (away from the CNP) was found. The suppressed intervalley scattering due to screening of atomically sharp defects and spin-orbit coupling regulated by gate voltage can explain the experimental results well. Our experimental results confirm the theoretical prediction that the weak localization in bilayer graphene is strongly suppressed by the trigonal warping and it is only present in systems with pronounced intervalley scattering.
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影响因子：
56.9
作者：
Ohta, Taisuke;Bostwick, Aaron;Rotenberg, Eli
通讯作者：
Rotenberg, Eli
DOI：
10.1098/rsta.2007.2159
发表时间：
2008-01
期刊：
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
影响因子：
--
作者：
D. Horsell;F. Tikhonenko;R. Gorbachev;A. K. Savchenko
通讯作者：
D. Horsell;F. Tikhonenko;R. Gorbachev;A. K. Savchenko
影响因子：
8.6
作者：
McCann, E.;Kechedzhi, K.;Altshuler, B. L.
通讯作者：
Altshuler, B. L.
影响因子：
3.7
作者：
Imura, Ken-Ichiro;Kuramoto, Yoshio;Nomura, Kentaro
通讯作者：
Nomura, Kentaro
影响因子：
3.7
作者：
Ki, Dong-Keun;Jeong, Dongchan;Park, Kee-Su
通讯作者：
Park, Kee-Su