Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?
Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?
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具有部分原子有序性的 GaInP 合金中辐射复合通道从离域态到局域态的转变：莫特跃迁的直接光学特征？
DOI：
10.1039/c5nr07252b
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发表时间：
2016-03
期刊：
影响因子：
6.7
通讯作者：
Yang H.
中科院分区：
文献类型：
--
作者：
Su Z. C.;Ning J. Q.;Deng Z.;Wang X. H.;Xu S. J.;Wang R. X.;Lu S. L.;Dong J. R.;Yang H.
安德森局域化是凝聚态物理和材料物理中的一个重要现象。事实上，定域态和离域态常常在一种材料中共存。它们被称为流动性边缘的边界分开。这两种制度之间可能发生莫特过渡。然而，人们普遍认为，安德森本地化或莫特转变的明显的演示是一个具有挑战性的任务。在这篇文章中，我们提出了一个直接的光学观察的辐射复合占主导地位的通道从离域（即，利用变温电致发光（EL）技术将GaInP/GaAs单结太阳能电池的GaInP基极层中的局域扩展）态转换为安德森局域态。研究发现，通过提高温度，可以促进辐射复合主导通道从离域态到局域态的显着转变。离域态是由局域原子有序畴（InP/GaP单层超晶格）引起的，而局域态是由铟（镓）含量的随机分布引起的。载流子在两种电子态之间的有效转移和热再分布被揭示为导致了明显的EL机制转变和电阻随温度的演化。我们的研究产生了一个自洽的精确图片载流子的本地化和转移的GaInP合金，这是一个非常重要的技术能源材料，用于制造高效率的光伏器件。
Anderson localization is a predominant phenomenon in condensed matter and materials physics. In fact, localized and delocalized states often co-exist in one material. They are separated by a boundary called the mobility edge. Mott transition may take place between these two regimes. However, it is widely recognized that an apparent demonstration of Anderson localization or Mott transition is a challenging task. In this article, we present a direct optical observation of a transition of radiative recombination dominant channels from delocalized (i.e., local extended) states to Anderson localized states in the GaInP base layer of a GaInP/GaAs single junction solar cell by the means of the variable-temperature electroluminescence (EL) technique. It is found that by increasing temperature, we can boost a remarkable transition of radiative recombination dominant channels from the delocalized states to the localized states. The delocalized states are induced by the local atomic ordering domains (InP/GaP monolayer superlattices) while the localized states are caused by random distribution of indium (gallium) content. The efficient transfer and thermal redistribution of carriers between the two kinds of electronic states was revealed to result in both a distinct EL mechanism transition and an electrical resistance evolution with temperature. Our study gives rise to a self-consistent precise picture for carrier localization and transfer in a GaInP alloy, which is an extremely technologically important energy material for fabricating high-efficiency photovoltaic devices.
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影响因子：
6.9
作者：
Z. Deng;Rongxin Wang;J. Ning;C. Zheng;W. Bao;Shijie Xu;Xiao-li Zhang;Shulong Lu;J. Dong
通讯作者：
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GaInP/GaAs 双结串联太阳能电池顶部 GaInP 子电池中光生载流子的局域化和复合的结构依赖性
影响因子：
9.5
作者：
Deng Zhuo;Ning Jiqiang;Su Zhicheng;Xu Shijie;Xing Zheng;Wang Rongxin;Lu Shulong;Dong Jianrong;Zhang Baoshun;Yang Hui
通讯作者：
Yang Hui
影响因子：
3.5
作者：
Lagendijk, Ad;van Tiggelen, Bart;Wiersma, Diederik S.
通讯作者：
Wiersma, Diederik S.
影响因子：
64.8
作者：
Wiersma, DS;Bartolini, P;Righini, R
通讯作者：
Righini, R
影响因子：
3.7
作者：
M. Sugisaki;H. Ren;K. Nishi;S. Sugou;Y. Masumoto
通讯作者：
M. Sugisaki;H. Ren;K. Nishi;S. Sugou;Y. Masumoto