All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing.
All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing.
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紧凑型 SOT-MRAM 的全电气控制：实现高效可靠的非易失性内存计算
DOI：
10.3390/mi13020319
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发表时间：
2022-02-18
期刊：
影响因子：
3.4
通讯作者：
Xing G
中科院分区：
文献类型：
--
作者：
Lin H;Luo X;Liu L;Wang D;Zhao X;Wang Z;Xue X;Zhang F;Xing G
二维货车德瓦耳斯（2D vdW）铁磁体具有出色的可扩展性、可控的铁磁性和面外各向异性，使得基于紧凑自旋电子学的非易失性存储器内计算（nv-IMC）有望解决存储器壁瓶颈问题。在这里，通过利用新兴的2D Fe 3GeTe 2的有趣的室温铁磁特性与两个自旋导电沟道的不同电子结构，我们报告了一种新型的基于Fe 3GeTe 2/MgO/Fe 3GeTe 2异质结构的非易失性自旋轨道扭矩（SOT）磁性隧道结（MTJ）器件，其通过调节自由层中类场转矩与类阻尼转矩系数的比率来演示单极和高速无场磁化切换。与传统的2 T1 M结构相比，所开发的3-晶体管-2-MTJ（3 T2 M）单元具有互补的数据存储特性，并且对于阅读“1”和“0”，分别具有201.4%（从271.7 mV到547.2 mV）和276%（从188.2 mV到520 mV）的增强的感测裕度。此外，优于传统的基于CoFeB的MTJ存储器单元对应物的上级，3 T2 M交叉阵列架构可以以24 ps的快速延迟和2.47 fJ/bit的超低功耗执行AND/NAND、OR/NOR布尔逻辑运算。这种器件到架构设计的详细微磁和电路级仿真结果显示了实现高性能的基于2D材料的紧凑型SOT磁性随机存取存储器的巨大潜力，促进了高可靠性和高能效nv-IMC的新应用。
Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability, controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics-based non-volatile in-memory computing (nv-IMC) that promises to tackle the memory wall bottleneck issue. Here, by employing the intriguing room-temperature ferromagnetic characteristics of emerging 2D Fe3GeTe2 with the dissimilar electronic structure of the two spin-conducting channels, we report on a new type of non-volatile spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device based on Fe3GeTe2/MgO/Fe3GeTe2 heterostructure, which demonstrates the uni-polar and high-speed field-free magnetization switching by adjusting the ratio of field-like torque to damping-like torque coefficient in the free layer. Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading “1” and “0”, respectively. Moreover, superior to the traditional CoFeB-based MTJ memory cell counterpart, the 3T2M crossbar array architecture can be executed for AND/NAND, OR/NOR Boolean logic operation with a fast latency of 24 ps and ultra-low power consumption of 2.47 fJ/bit. Such device to architecture design with elaborated micro-magnetic and circuit-level simulation results shows great potential for realizing high-performance 2D material-based compact SOT magnetic random-access memory, facilitating new applications of highly reliable and energy-efficient nv-IMC.
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减少合成反铁磁体中的 Dzyaloshinskii-Moriya 相互作用和无场自旋轨道扭矩切换
影响因子：
16.6
作者：
Chen R;Cui Q;Liao L;Zhu Y;Zhang R;Bai H;Zhou Y;Xing G;Pan F;Yang H;Song C
通讯作者：
Song C
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通讯作者：
Incorvia, Jean Anne C.
影响因子：
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作者：
Garzon, Esteban;De Rose, Raffaele;Lanuzza, Marco
通讯作者：
Lanuzza, Marco