Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping
Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping
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单晶金刚石中的缺陷和螺纹位错：关注硼和氮共掺杂
DOI：
10.1002/pssa.201900581
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
J. Achard
中科院分区：
文献类型：
--
作者：
R. Issaoui;A. Tallaire;Aida Mrad;L. William;F. Bénédic;M;J. Achard
对于垂直电力电子元件的制造，必须使用独立的高硼掺杂单晶金刚石衬底，在其顶部过度生长薄的低掺杂有源层。该衬底的晶体质量是最重要的，因为所需的高掺杂水平也可能导致在有源层中产生扩展的缺陷。在此，研究了通过化学气相沉积（CVD）生长的厚的高度硼掺杂的金刚石膜的质量的改善。探索了与少量氮共掺杂作为限制扩展缺陷的形成和传播的方式。结果表明，在本研究中使用的参数下，生长速率和硼浓度不受氮的添加的影响。表面形态和缺陷密度估计为每个量的氮，和拉曼光谱证实，氮除了补偿应变引起的硼掺入单晶金刚石。因此，与氮共掺杂被证明是一种有用的策略，以获得高质量的硼掺杂金刚石衬底可能适合于功率器件的发展。
For the fabrication of vertical power electronic components, the use of a freestanding highly boron‐doped single crystal diamond substrate is mandatory, on top of which a thin low‐doped active layer is overgrown. The crystalline quality of this substrate is of prime importance as the high doping level required is also likely to lead to the generation of extended defects in the active layer. Herein, the improvement of the quality of thick highly boron‐doped diamond films grown by chemical vapor deposition (CVD) is investigated. Codoping with a low amount of nitrogen is explored as a way to limit the formation and propagation of extended defects. It is shown that the growth rate and boron concentration are not impacted by the addition of nitrogen with the parameters used in this study. Surface morphology and defect density estimated for each amount of nitrogen are presented; and Raman spectroscopy confirms that nitrogen addition compensates the strain induced by boron incorporation in single crystal diamond. Codoping with nitrogen is thus demonstrated as a useful strategy to obtain high quality boron‐doped diamond substrates potentially suitable for the development of power devices.
高功率微波等离子体CVD在邻位衬底上生长同质外延金刚石薄膜
DOI：
--
发表时间：
2008
期刊：
影响因子：
--
作者：
山本琢也;他;S.Kawashima
通讯作者：
S.Kawashima
影响因子：
1.5
作者：
Umezawa, Hitoshi;Shikata, Shin-ichi;Funaki, Tsuyoshi
通讯作者：
Funaki, Tsuyoshi