High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits.
High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits.
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超高产量、晶圆级制造的超低损耗、色散工程氮化硅光子电路 。
DOI：
10.1038/s41467-021-21973-z
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发表时间：
2021-04-16
影响因子：
16.6
通讯作者：
Kippenberg TJ
中科院分区：
文献类型：
--
作者：
Liu J;Huang G;Wang RN;He J;Raja AS;Liu T;Engelsen NJ;Kippenberg TJ
低损耗光子集成电路和微谐振器已实现了广泛的应用，如窄线宽激光器和芯片级频率梳。要将这些技术推广应用，通过成熟的代工厂制造工艺实现超低光学损耗至关重要。集成氮化硅（Si3N4）光子学的最新进展表明，在芯片级产量下，能够实现品质因数Q＞10×10⁶的超低损耗、色散工程微谐振器。然而，目前的制造技术对于现有及新兴应用而言，产量和性能还不够高，例如对于需要米级长度光子电路的集成行波参量放大器。在此，我们展示了一种在晶圆级产量、性能和长度尺度方面均满足所有要求的制造技术。通过对成千上万的光学谐振进行统计分析，并经光子存储时间为19纳秒的腔衰荡法证实，在完整的4英寸晶圆上制备出了平均品质因数超过30×10⁶（对应1.0分贝每米的光学损耗）的光子微谐振器。该工艺可大面积高产运行，能在仅5×5平方毫米大小的芯片中制备出损耗为2.4分贝每米的1米长螺旋波导。通过利用克尔非线性效应进行自校准的响应测量，我们发现我们的氮化硅微谐振器的本征吸收限制品质因数可超过2×10⁸。这种吸收损耗足够低，以至于即使在音频频段，克尔非线性效应也主导着微谐振器的响应。将这种氮化硅技术引入商业代工厂，能够显著提升集成光子学的性能和能力。
对于非线性光子集成电路的广泛技术应用而言，需要超低光学损耗和高制造产量。在此，作者们提出了一种互补金属氧化物半导体（CMOS）制造技术，该技术能在晶圆级实现平均品质因数超过3000万且光学损耗为1分贝每米的集成光子微谐振器。
Low-loss photonic integrated circuits and microresonators have enabled a wide range of applications, such as narrow-linewidth lasers and chip-scale frequency combs. To translate these into a widespread technology, attaining ultralow optical losses with established foundry manufacturing is critical. Recent advances in integrated Si3N4 photonics have shown that ultralow-loss, dispersion-engineered microresonators with quality factors Q > 10 × 106 can be attained at die-level throughput. Yet, current fabrication techniques do not have sufficiently high yield and performance for existing and emerging applications, such as integrated travelling-wave parametric amplifiers that require meter-long photonic circuits. Here we demonstrate a fabrication technology that meets all requirements on wafer-level yield, performance and length scale. Photonic microresonators with a mean Q factor exceeding 30 × 106, corresponding to 1.0 dB m−1 optical loss, are obtained over full 4-inch wafers, as determined from a statistical analysis of tens of thousands of optical resonances, and confirmed via cavity ringdown with 19 ns photon storage time. The process operates over large areas with high yield, enabling 1-meter-long spiral waveguides with 2.4 dB m−1 loss in dies of only 5 × 5 mm2 size. Using a response measurement self-calibrated via the Kerr nonlinearity, we reveal that the intrinsic absorption-limited Q factor of our Si3N4 microresonators can exceed 2 × 108. This absorption loss is sufficiently low such that the Kerr nonlinearity dominates the microresonator’s response even in the audio frequency band. Transferring this Si3N4 technology to commercial foundries can significantly improve the performance and capabilities of integrated photonics. For widespread technological application of nonlinear photonic integrated circuits, ultralow optical losses and high fabrication throughput are required. Here, the authors present a CMOS fabrication technique that realizes integrate photonic microresonators on waver-level with mean quality factors exceeding 30 million and 1 dB/m optical losses.
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影响因子：
16.6
作者：
Kim DG;Han S;Hwang J;Do IH;Jeong D;Lim JH;Lee YH;Choi M;Lee YH;Choi DY;Lee H
通讯作者：
Lee H
影响因子：
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作者：
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10.4
作者：
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Lin, Qiang
影响因子：
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作者：
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通讯作者：
Gisin, Nicolas
影响因子：
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作者：
Griffith, Austin;Cardenas, Jaime;Lipson, Michal
通讯作者：
Lipson, Michal