Universal light-guiding geometry for on-chip resonators having extremely high Q-factor.
Universal light-guiding geometry for on-chip resonators having extremely high Q-factor.
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DOI：
10.1038/s41467-020-19799-2
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发表时间：
2020-11-23
影响因子：
16.6
通讯作者：
Lee H
中科院分区：
文献类型：
--
作者：
Kim DG;Han S;Hwang J;Do IH;Jeong D;Lim JH;Lee YH;Choi M;Lee YH;Choi DY;Lee H
通过提供一种有效的方法来利用集成器件中的非线性现象，高q光谐振器导致了片上光子学的最新进展。然而，开发制造工艺，将任何新材料塑造成芯片上表面极其光滑的谐振器，一直是一项非常具有挑战性的任务。在这里，我们描述了一种通用的方法来实现超高q谐振器，任何具有理想性能的新材料都可以通过物理气相沉积沉积。利用该方法，可在预图案化基底上自动生成具有分子尺度表面粗糙度的导光芯。用高非线性硫系玻璃As2S3验证了其有效性。所研制的As2S3谐振器的q因子接近于在受材料损耗限制的硫系光纤中达到的传输损耗记录。由于提高了q因子，受激布里渊散射激光的阈值功率比以前的记录低了100倍。高q谐振器用于增强光子学中的非线性现象，但开发一种制造工艺来将新材料塑造成谐振器是具有挑战性和昂贵的。在这里，作者提出了一种方法，使用气相沉积在预图板上制造任何新材料的谐振器。
By providing an effective way to leverage nonlinear phenomena in integrated devices, high-Q optical resonators have led to recent advances in on-chip photonics. However, developing fabrication processes to shape any new material into a resonator with extremely smooth surfaces on a chip has been an exceptionally challenging task. Here, we describe a universal method to implement ultra-high-Q resonators with any new material having desirable properties that can be deposited by physical vapor deposition. Using this method light-guiding cores with surface roughness on the molecular-scale are created automatically on pre-patterned substrates. Its efficacy has been verified using As2S3, a chalcogenide glass that has high-nonlinearity. The Q-factor of the As2S3 resonator so-developed approached the propagation loss record achieved in chalcogenide fibers which were limited by material losses. Owing to the boosted Q-factor, lasing by stimulated Brillouin scattering has been demonstrated with 100 times lower threshold power than the previous record. High-Q resonators are used to enhance nonlinear phenomena in photonics, but developing a fabrication process to shape a new material into a resonator is challenging and costly. Here, the authors present a method using vapour deposition on pre-patterned substrates to fabricate resonators with any new material.
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影响因子：
16.6
作者：
Lecaplain, C.;Javerzac-Galy, C.;Gorodetsky, M. L.;Kippenberg, T. J.
通讯作者：
Kippenberg, T. J.
影响因子：
3.2
作者：
Choi, Duk-Yong;Madden, Steve;Luther-Davies, Barry
通讯作者：
Luther-Davies, Barry
影响因子：
3.6
作者：
Du, Qingyang;Huang, Yizhong;Hu, Juejun
通讯作者：
Hu, Juejun
影响因子：
3.5
作者：
Kim, W. H.;Nguyen, V. Q.;Sanghera, J. S.
通讯作者：
Sanghera, J. S.
影响因子：
64.8
作者：
Aoki, Takao;Dayan, Barak;Kimble, H. J.
通讯作者：
Kimble, H. J.