Coexistence of multiple morphotropic phase boundaries in strained La-doped BiFeO3 thin films
Coexistence of multiple morphotropic phase boundaries in strained La-doped BiFeO3 thin films
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应变 La 掺杂 BiFeO3 薄膜中多个同形相界的共存
DOI：
10.1016/j.mtphys.2021.100345
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发表时间：
2021-03
影响因子：
11.5
通讯作者：
Jun-Ming Liu
中科院分区：
文献类型：
--
作者：
Xiaozhe Yin;Chao Chen;Zhen Fan;Minghui Qin;Min Zeng;Xubing Lu;Guofu Zhou;Xingsen Gao;Deyang Chen;Jun-Ming Liu
在压电材料中，两相共存于准同型相界（MPB），由于两相之间的转变是电可控制的，因此通常具有很高的机电耦合响应。传统上，准同型相界是由组成驱动的，例如在PbZrO 3-PbTiO 3系统中。最近的研究表明，它可以在BiFeO 3以及应变诱导。使用应变工程结合化学掺杂的组合，我们揭示了共存的多个准同型相界（多MPBs）在高应变BiFeO3薄膜通过La掺杂。通过施加电场，我们显示了这些多MPBs的可逆切换。La掺杂BiFeO3薄膜中多相带的发现，与纯BiFeO3薄膜中多相带的发现相比，进一步增强了BiFeO3薄膜的机电耦合响应，为获得高性能压电材料开辟了新的领域.
The coexistence of two phases across a morphotropic phase boundary (MPB), in piezoelectric materials, usually possess high electromechanical coupling response owing to the electrically controllable of transition between the two phases. Conventionally, morphotropic phase boundary is compositionally driven such as in PbZrO3–PbTiO3system. Recent study has demonstrated it can be strain-induced in BiFeO3as well. Using a combination of strain engineering in conjunction with chemical doping, we reveal the coexistence of multiple morphotropic phase boundaries (multi-MPBs) in highly strained BiFeO3thin films through La doping. By applying an electric field, we show the reversible switching of these multi-MPBs. The discovery of these multi-MPBs in La-doped BiFeO3thin films further enhance the electromechanical coupling response comparing with the previous observed MPB in pure BiFeO3, opening a new field to obtain high-performance piezoelectric materials.
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