Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering
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反应磁控溅射制备低氮化钨薄膜的热稳定性

DOI:
10.1016/j.jnucmat.2016.12.009
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发表时间:
2017-03
影响因子:
3.1
通讯作者:
P. Wang
P. Wang
中科院分区:
工程技术2区
文献类型:
--
作者:
X.X. Zhang;Y.Z. Wu;B. Mu;L. Qiao;W.X. Li;J.J. Li;P. Wang

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以反应磁控溅射沉积在硅样品上的亚氮化钨薄膜为模型系统,研究了热处理过程中的相稳定性和微观组织演变。采用XRD、SEM&FIB、XPS、RBS和TDS对氮化钨薄膜在真空中加热至1473 K后的稳定性进行了研究。在给定的实验参数下,获得了钨氮化学计量比为2:1的920 nm厚的结晶膜。结果表明:在973 K真空退火下,W2N薄膜没有发生相和组织的变化;升温至1073 K导致W2N相部分分解,表面形成W富集层。在相同温度下增加退火时间,W2N相的进一步分解可以忽略不计。当温度达到1473 K时,W2N薄膜发生完全分解。
Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W2N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W2N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W2N phase was negligible. The complete decomposition of W2N film happened as the temperature reached up to 1473 K.
DOI: 10.1016/j.mee.2007.07.017
发表时间: 2008-02
影响因子: 2.3
作者:
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影响因子: 3.1
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发表时间: 2002-09-01
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
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DOI: 10.1088/0741-3335/49/12b/s04
发表时间: 2007-12
影响因子: 2.2
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