Thermal fatigue of Ag flake sintering die-attachment for Si/SiC power devices
Thermal fatigue of Ag flake sintering die-attachment for Si/SiC power devices
复制标题
Si/SiC 功率器件银片烧结模具附件的热疲劳
DOI：
10.1007/s10854-013-1138-x
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
K. Suganuma
中科院分区：
文献类型：
--
作者：
S. Sakamoto;S. Nagao;K. Suganuma
新兴的SiC功率半导体器件有望在250-300 °C的高温条件下工作，而Si器件的工作温度限制在180 °C。因此，用于新兴SiC功率器件的管芯键合材料需要在这种极端工作环境中具有足够的能力。在这项研究中，我们研究了热机械可靠性的芯片连接技术，使用银片膏，它可以通过低温和低压烧结处理。在160 °C下从薄片表面去除有机分散剂层后，Ag薄片立即开始烧结，从而可以进行芯片键合。测试的硅芯片附件与膏连接保持高强度（23 MPa），从−40到180 °C的1,000个热循环。无裂纹、无界面脱粘的稳定微观结构保证了硅基片状银膏芯片粘接的可靠性。SiC模具附件在−40和250 °C的1,000次循环中也保持了其高强度（24 MPa），尽管在1,000次循环后出现了轻微的退化。烧结后的银片浆料层/SiC晶片界面脱粘对银片浆料连接强度有影响。所获得的结果表明，我们的银片膏管芯附着可以应用于Si和SiC功率器件能够高温操作。
Emerging SiC power semiconductor devices are expected to work under the high temperature condition of 250–300 °C while the operation of Si devices is limited up to 180 °C. The die-bonding materials for emerging SiC power devices hence need to have sufficient capability in such extreme operating environments. In this study, we investigated the thermomechanical reliability of the die-attach technology using Ag flake paste, which can be processed by low-temperature and low-pressure sintering. The Ag flakes start to sinter immediately after the organic dispersant layer is removed from the flake surface at 160 °C, and die-bonding consequently becomes possible. The tested Si die-attachments joining with the paste maintained high strength (23 MPa) up to 1,000 thermal cycles from −40 to 180 °C. The stable microstructures without crack and no interfacial debonding assure the reliability of the Ag flake paste die-attach of Si. SiC die-attachments also maintained their high strength (24 MPa) up to 1,000 cycles of −40 and 250 °C, though a slight degradation appeared after 1,000 cycles. The debondings at the sintered Ag flake paste layer/SiC wafer interface were affected to the joining strength with the Ag flake paste. The obtained results indicate that our Ag flake paste die-attach can be applied to both Si and SiC power devices capable of high temperature operations.
影响因子：
1.5
作者：
T. Morita;E. Ide;Y. Yasuda;A. Hirose;K. Kobayashi
通讯作者：
T. Morita;E. Ide;Y. Yasuda;A. Hirose;K. Kobayashi
影响因子：
1.2
作者：
Morita, Toshiaki;Yasuda, Yusuke;Hirose, Akio
通讯作者：
Hirose, Akio