Modulation on the electronic properties and band gap of layered ReSe2 via strain engineering
Modulation on the electronic properties and band gap of layered ReSe2 via strain engineering
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通过应变工程调制层状 ReSe2 的电子特性和带隙
DOI：
10.1016/j.jallcom.2020.154364
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发表时间：
2020-06
影响因子：
6.2
通讯作者：
Shan Chongxin
中科院分区：
文献类型：
--
作者：
Liu Yiming;Li Xing;Guo Yao;Yang Tao;Chen Kaijian;Lin Chaonan;Wei Jianyong;Liu Qian;Lu Yingjie;Dong Lin;Shan Chongxin
二维（2D）材料由于其平面性质、良好的机械、光学和电学性质而引起了极大的关注，特别是对于其性能可以通过外部机械应变调制的柔性电子器件。在这里，层状ReSe 2的压阻性能的各种均匀应变进行了研究。ReSe 2基柔性器件在拉伸/压缩应变下观察到高灵敏度和可靠的电阻响应。光致发光光谱的测量进一步证实了应变对带隙能量的调制，导致ReSe 2的压阻特性。此外，还发现应变方向对ReSe 2的机电行为有很大的影响，当应变沿沿着b轴方向施加时，ReSe 2的应变规因子是沿垂直于b轴方向施加时的4.29倍。应变方向敏感的机电行为可以归因于不同的带隙变化引起的沿着不同方向的应变。这些结果有助于基于各向异性二维材料的柔性电子器件的设计、性能改进和应用开发。
Two-dimensional (2D) materials have drawn tremendous attention due to their planar nature, good mechanical, optical and electrical properties especially for flexible electronic devices whose performance could be modulated by external mechanical strains. Here, the piezoresistive property of layered ReSe2upon various homogeneous strains is investigated. Highly sensitive and reliable response in resistance has been observed for ReSe2-based flexible devices under tensile/compressive strains. Photoluminescence spectra measurement further confirmed the strain modulation on the band gap energy, leading to the piezoresistive property in ReSe2. Additionally, it is found that the electromechanical behavior of ReSe2can be greatly influenced by the directions of applied strains, where the gauge factor is 4.29 times higher when the strain is applied along theb-axis than that obtained under strain perpendicular tob-axis. The strain-direction-sensitive electromechanical behavior can be attributed to the different band gap change induced by strains along various directions. These results can contribute to the design, performance improvement and application development of flexible electronic devices based on anisotropic 2D materials.
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影响因子：
3.1
作者：
RAJANNA, K;MOHAN, S;MUTHUNAYAGAM, AE
通讯作者：
MUTHUNAYAGAM, AE
影响因子：
10.8
作者：
Manzeli, Sajedeh;Allain, Adrien;Kis, Andras
通讯作者：
Kis, Andras
各向异性原子薄二硒化铼的层间相互作用
影响因子：
9.9
作者：
Huan Zhao;Jiangbin Wu;Hongxia Zhong;Qiushi Guo;Xiaomu Wang;Fengnian Xia;Li Yang;Ping-Heng Tan;Han Wang
通讯作者：
Han Wang
影响因子：
10.8
作者：
Qing Yang;Y. Liu;Caofeng Pan;Jun Chen;X. Wen;Zhong Lin Wang
通讯作者：
Qing Yang;Y. Liu;Caofeng Pan;Jun Chen;X. Wen;Zhong Lin Wang
影响因子：
3.7
作者：
Alyoruk, M. Menderes;Aierken, Yierpan;Sevik, Cem
通讯作者：
Sevik, Cem