Simulation optimizing of n-type HIT solar cells with AFORS-HET

Simulation optimizing of n-type HIT solar cells with AFORS-HET
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使用 AFORS-HET 对 n 型 HIT 太阳能电池进行仿真优化

DOI:
10.1142/s0217984917400255
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发表时间:
2017-07
影响因子:
1.9
通讯作者:
Gu Xiaofeng
Gu Xiaofeng
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Yao Yao;Xiao Shaoqing;Zhang Xiumei;Gu Xiaofeng

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This paper presents a study of heterojunction with intrinsic thin layer (HIT) solar cells based on n-type silicon substrates by a simulation software AFORS-HET. We have studied the influence of thickness, band gap of intrinsic layer and defect densities of every interface. Details in mechanisms are elaborated as well. The results show that the optimized efficiency reaches more than 23% which may give proper suggestions to practical preparation for HIT solar cells industry.
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