Oxidative Addition Reactions of Low‐Valent Gallium Compounds with Primary Phosphanes
Oxidative Addition Reactions of Low‐Valent Gallium Compounds with Primary Phosphanes
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低价镓化合物与初级膦的氧化加成反应
DOI:
10.1002/ejic.202100723
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发表时间:
2021
影响因子:
2.3
通讯作者:
C. von Hänisch
中科院分区:
文献类型:
--
作者:
S. Schneider;C. von Hänisch
Oxidative addition reactions of (Dipp2NacNac)Ga with the primary silylphosphanes R2R'Si‐PH2in toluene led to the phospha‐gallanes (Dipp2NacNac)GaH(PHSiR2R’); R=R’=Me (1), R=Me, R’=Thex (2), R=R’=iPr (3) and R=Ph, R’=tBu (4). The same reaction starting from the diphosphaneiPr2Si(PH2)2yields the digallane {(Dipp2NacNac)GaH(PH)}2(SiiPr2) (5 a). In contrast, reaction with the hypersilylphosphane resulted in the elimination of (Me3Si)3SiH and formation of the diphospha‐gallane (Dipp2NacNac)Ga(PH2)(PHSi(SiMe3)3) (6). The primary organo‐phosphanetBuPH2shows a similar reaction behavior in toluene though both the di‐ and monophospha‐gallanes (Dipp2NacNac)GaX(PHtBu) (7 a: X=PH2,7 b: X=H) occur. In a row of used solvents, only pyridine led selective to the formation of7 bthus we tested the influence of this solvent on the reaction ofiPr2Si(PH2)2with only one equivalent (Dipp2NacNac)Ga which yields the compound (Dipp2NacNac)GaH(PHSiiPr2PH2) (5 b). Additionally, a derivative of compound3, (Dipp2NacNac)GaCl(PHSiiPr3) (8), with an Cl atom bond to gallium instead of a hydrogen was obtained by the reaction of (Dipp2NacNac)GaCl2withiPr3SiPHLi.
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DOI:
10.1515/znb-1953-1212
发表时间:
1953
期刊:
Zeitschrift für Naturforschung B
影响因子:
--
作者:
G. Fritz
通讯作者:
G. Fritz
影响因子:
--
作者:
A. H. Cowley;Richards A. Jones
通讯作者:
Richards A. Jones
DOI:
10.1002/zaac.200700180
发表时间:
2007
期刊:
Zeitschrift für anorganische und allgemeine Chemie
影响因子:
--
作者:
C. Hänisch;Stephan Traut;S. Ståhl
通讯作者:
S. Ståhl
DOI:
10.1002/zaac.19713850306
发表时间:
1971
期刊:
Zeitschrift für anorganische und allgemeine Chemie
影响因子:
--
作者:
G. Fritz;H. Schäfer
通讯作者:
H. Schäfer
影响因子:
4.6
作者:
S. Weinrich;H. Piotrowski;Martin Vogt;A. Schulz;M. Westerhausen
通讯作者:
M. Westerhausen