Light-emitting quantum dot transistors: emission at high charge carrier densities.
Light-emitting quantum dot transistors: emission at high charge carrier densities.
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DOI：
10.1021/nl504582d
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发表时间：
2015-03-11
期刊：
影响因子：
10.8
通讯作者：
Zaumseil J
中科院分区：
文献类型：
--
作者：
Schornbaum J;Zakharko Y;Held M;Thiemann S;Gannott F;Zaumseil J
对于胶体半导体量子点在光电器件（例如太阳能电池和发光二极管）中的应用，了解和控制它们在高载流子密度下的电荷传输和复合动力学至关重要。两者都可以在双极发光场效应晶体管（LEFET）中进行研究。在这里，我们报道了第一个量子点发光晶体管。电解质门控的 PbS 量子点 LEFET 在通道内的受限区域表现出近红外电致发光，这证明了配体交换量子点固体中真正的双极输运。出乎意料的是，外部量子效率随着电流密度的增加而显着提高。这种效应与 PbS 量子点薄膜中电子和空穴浓度较高时光致发光量子产率的异常增加和较长的平均寿命相关。我们将最初的低发射效率归因于陷阱状态的非辐射损失。在较高的载流子密度下，这些陷阱态被停用，并且发射以三重子为主。
For the application of colloidal semiconductor quantum dots in optoelectronic devices, for example, solar cells and light-emitting diodes, it is crucial to understand and control their charge transport and recombination dynamics at high carrier densities. Both can be studied in ambipolar, light-emitting field-effect transistors (LEFETs). Here, we report the first quantum dot light-emitting transistor. Electrolyte-gated PbS quantum dot LEFETs exhibit near-infrared electroluminescence from a confined region within the channel, which proves true ambipolar transport in ligand-exchanged quantum dot solids. Unexpectedly, the external quantum efficiencies improve significantly with current density. This effect correlates with the unusual increase of photoluminescence quantum yield and longer average lifetimes at higher electron and hole concentrations in PbS quantum dot thin films. We attribute the initially low emission efficiencies to nonradiative losses through trap states. At higher carrier densities, these trap states are deactivated and emission is dominated by trions.
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影响因子：
41.2
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