Electrical property-microstructure of copper interconnects printed by localized pulsed electrodeposition (l-PED)
Electrical property-microstructure of copper interconnects printed by localized pulsed electrodeposition (l-PED)
复制标题
局部脉冲电沉积（l-PED）印刷铜互连线的电性能-微观结构
DOI：
10.1016/j.matlet.2022.133364
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发表时间：
2023
影响因子：
3
通讯作者：
Minary-Jolandan, Majid
中科院分区：
文献类型：
--
作者：
Bhuiyan, Md Emran;Wang, Chao;Arellano-Jimenez, M. Josefina;Waliullah, Mohammad;Quevedo-Lopez, Manuel;Bernal, Rodrigo;Minary-Jolandan, Majid
微电子、互连和传感器应用需要能够以小规模（<mm）印刷高导电性金属的印刷工艺。由于金属的电性能是由其微观结构控制的，因此需要建立每个过程的微观结构-性能关系。在最近开发的局部脉冲电沉积（I-PED）工艺中，在金属印刷期间施加的脉冲电压允许控制微观结构。在这篇文章中，我们量化的电阻率的铜（Cu）互连印刷的电-PED工艺，并将其与其微观结构。结果表明，该合金具有纳米孪晶（nt）和纳米晶（nc）相结合的显微组织，平均晶粒尺寸为190 nm，孪晶厚度为1.8 ~ 1.29 nm。测量电阻率为8.25 µΩ.cm，这与观察到的微观结构相关，并且对于在印刷金属上没有进行后处理退火的印刷工艺是显著的。
Printing processes that enable printing high conductivity metals at small scale (<mm) are in demand for microelectronics, interconnects, and sensors applications. Since electrical properties of metals are controlled by their microstructure, microstructure-property relation for each process needs to be established. In the recently developed localized pulsed electrodeposition (l-PED) process, the pulsed voltage applied during metal printing allows control over the microstructure. In this article, we quantify the electrical resistivity of copper (Cu) interconnects printed by thel-PED process and correlate it with its microstructure. The results show a microstructure combined of nanotwinned (nt) grains and nanocrystalline (nc) grains, with an average grain size of 190 nm and twin thickness of ∼8 nm to ∼29 nm. The electrical resistivity was measured to be 8.25 µΩ.cm, which correlates with the observed microstructure and is remarkable for a printing process with no post-processing annealing done on the printed metal.
影响因子：
3.6
作者：
Daryadel, Soheil;Behroozfar, Ali;Minary-Jolandan, Majid
通讯作者：
Minary-Jolandan, Majid
影响因子：
4.6
作者：
Bhuiyan, Md Emran Hossain;Behroozfar, Ali;Minary-Jolandan, Majid
通讯作者：
Minary-Jolandan, Majid
影响因子：
3.2
作者：
Chen, X. H.;Lu, L.;Lu, K.
通讯作者：
Lu, K.