Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures.
Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures.
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DOI：
10.1038/ncomms2386
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发表时间：
2013
影响因子：
16.6
通讯作者：
中科院分区：
文献类型：
--
作者：
纳米设备中磁序的控制支持了将自旋电子学概念整合到传统电子学中的许多建议。一个关键的挑战在于找到一种节能的控制手段，因为功耗仍然是限制集成电路未来小型化的重要因素。一种有希望的方法涉及磁致伸缩/压电系统中的磁电耦合，其中感应应变可以直接作用于磁各向异性。虽然这种过程已经在几种多铁异质结构中得到了证明，但将这种复杂的材料结合到实际的几何结构中还很少见。在这里，我们证明了通过外加电场驱动的感应应变，在混合压电/自旋阀纳米线中产生显著的各向异性变化的可能性。通过结合磁光克尔效应和磁阻测量，我们证明了在局部施加应变的情况下，磁化壁传播场可以加倍。这些结果突出了构建用于磁逻辑器件的低功率域壁栅极的前景。利用电场来控制铁磁材料的磁化可以实现更高效的电子设备。雷等人。结果表明，通过对具有压电体的磁致伸缩纳米线施加横向应变，可以实现对纳米线中磁畴壁面运动的电压控制选通。
The control of magnetic order in nanoscale devices underpins many proposals for integrating spintronics concepts into conventional electronics. A key challenge lies in finding an energy-efficient means of control, as power dissipation remains an important factor limiting future miniaturization of integrated circuits. One promising approach involves magnetoelectric coupling in magnetostrictive/piezoelectric systems, where induced strains can bear directly on the magnetic anisotropy. While such processes have been demonstrated in several multiferroic heterostructures, the incorporation of such complex materials into practical geometries has been lacking. Here we demonstrate the possibility of generating sizeable anisotropy changes, through induced strains driven by applied electric fields, in hybrid piezoelectric/spin-valve nanowires. By combining magneto-optical Kerr effect and magnetoresistance measurements, we show that domain wall propagation fields can be doubled under locally applied strains. These results highlight the prospect of constructing low-power domain wall gates for magnetic logic devices. The use of electric fields to control the magnetization of ferromagnetic materials could enable more efficient electronics. Lei et al. show that by applying lateral strain to a magnetostrictive nanowire with a piezoelectric, voltage-controlled gating of magnetic domain wall motion in the wire can be achieved.
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影响因子：
3.2
作者：
Dean, J.;Bryan, M. T.;Allwood, D. A.
通讯作者：
Allwood, D. A.
影响因子：
4
作者：
Roy, Kuntal;Bandyopadhyay, Supriyo;Atulasimha, Jayasimha
通讯作者：
Atulasimha, Jayasimha
影响因子：
41.2
作者：
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通讯作者：
Suzuki, Yoshishige
影响因子：
4
作者：
Atkinson, D.;Eastwood, D. S.;Bogart, L. K.
通讯作者：
Bogart, L. K.
影响因子：
3.7
作者：
Lei, Na;Park, Sanghwan;Holy, Vaclav
通讯作者：
Holy, Vaclav