Insights into the role of interface modification in performance enhancement of ZnTe:Cu contacted CdTe thin film solar cells
Insights into the role of interface modification in performance enhancement of ZnTe:Cu contacted CdTe thin film solar cells
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深入探讨界面改性在 ZnTe:Cu 接触 CdTe 薄膜太阳能电池性能增强中的作用
DOI：
10.1016/j.solener.2020.02.083
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发表时间：
2020-05
期刊：
影响因子：
6.7
通讯作者：
Mai Yaohua
中科院分区：
文献类型：
--
作者：
Shen Kai;Wang Xiaoqing;Zhang Yu;Zhu Hongbing;Chen Zengchuang;Huang Caizhang;Mai Yaohua
CdTe已成为薄膜光伏市场的主要贡献者。合适的背接触仍然是实现高效的CdTe薄膜太阳电池的关键问题之一。在此，我们深入研究了具有代表性的ZnTe：Cu背接触结构的界面修饰和器件性能提高的机理。研究发现，尽管沉积的ZnTe：Cu缓冲层可以降低接触势垒，但器件的性能仍然受到与缺陷相关的复合增加的限制。结果表明，控制热处理工艺能有效地减少背接触处的复合损失。详细的表征表明，热处理过程中发生了界面反应，改变了界面成分，优化了界面化学态和能带排列。界面性质的改善减少了缺陷的复合，促进了空穴的传输，从而大大提高了器件的效率。
CdTe has become a leading contributor in the thin-film photovoltaic market. A suitable back contact is still one of the most crucial issues to realize efficient CdTe thin film solar cells. Herein, we intensively studied the mechanisms of interfacial modification and device performance enhancement for the representative ZnTe:Cu back contact structure. It’s found that, in spite the as-deposited ZnTe:Cu buffer could reduce the contact barrier, the device performance is still limited by the increased defect-related recombination. A controlled heat treatment process is proved to be effective in alleviating the recombination loss at the back contact. Detailed characterizations demonstrate that the CdTe/ZnTe:Cu interface reaction happens and the interfacial composition is modified during the heat treatment process, which optimize the interfacial chemical states and band alignment. The improved interfacial properties decrease the defect-related recombination and promote the holes transport, and consequently improve the device efficiency greatly.
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